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| Call for PapersBest Student Paper Award |
66TH ANNUAL DRC BEST STUDENT PAPER AWARDEES
Observation of magnetoresistance polarity reversal in 3D to 2D tunneling in an asymmetric GaMnAs resonant tunneling diode
E. Likovich1, K. Russell1, W. Yi1, V. Narayanamurti1, K.-C. Ku2, M. Zhu2, and N. Samarth2, 1School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts, USA and 2Physics
Department, Penn State University, University Park, Pennsylvania, USA |
Power performance of MBE-grown N-face high electron mobility transistors with AlN back barrier
M. H. Wong1 , Y. Pei1, R. Chu1, S. Rajan1, B. L. Swenson1, D. F. Brown1, S. Keller1, S. P.
DenBaars1,2, J. S. Speck2 and U. K. Mishra1, 1Department of Electrical and Computer
Engineering and 2Materials Department, University of California, Santa Barbara, California,
USA
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BEST STUDENT PAPER AWARD GUIDELINES
One Best Student Paper Awards will be selected at the 67th Annual DRC. Papers that are based on the independent research of the
graduate student who is presenting the work are eligible for the Best Student Paper Award.
THE ABSTRACT MUST BE IDENTIFIED AS A
STUDENT PAPER AT THE TIME OF ABSTRACT SUBMISSION to be considered for the award.
The award is made based on the quality of the written abstract and the oral or poster presentation. The awardee will be presented with
a certificate and monetary award check at the 68th Annual Device Research Conference.
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