Device Research Conference DRC and IEEE

Call for Papers

Abstract Submission

Conference Information

Technical Program

   Plenary Session

   Invited Presentations

   Rump Sessions

   Social Events

   Short Course

   Advance Program


Presenter Information



2D Materials Beyond Graphene
Sunday, June 23, 2013
Location: McKenna Hall
As interest in the use of 2D materials for new devices continues to grow, the Device Research Conference (DRC) will hold a Short Course on the physics, fabrication, and performance potential of 2D materials and devices beyond graphene. While graphene led the 2D material revolution, a new class of materials called transition metal dichalcogenides, such as MoS2, are rapidly gaining momentum in the electronics space. In contrast to graphene, several of the 2D dichalcogenide materials possess considerable bandgaps (1-2 eV), and with their near-atomic thinness are very attractive for aggressively scaled digital transistors along with several other applications. This course will teach the device physics, modeling and performance projections for a variety of 2D materials. Experimental results, including optoelectronic properties and field-effect transistors and scaling properties, will be discussed. The unique mechanical properties for 2D material-enabled devices will be presented and a final discussion of circuits and systems from 2D materials will round out the course. The course is intended for physics or engineering graduate students, as well as industry, government, and university researchers, and managers who want a compact introduction to this new area of material and device exploration.
8:30-8:40 AM Welcome
Simulation and Performance Projection
8:40-9:40 AM Simulation of devices with 2D channel materials: Device physics, concepts, and performance projection - Jing Guo, University of Florida
9:40-10:40 AM Charge transport in 2D crystal semiconductors: Theory, experiment, and device applications - Debdeep Jena, University of Notre Dame
10:40-11:00 AM Break
Experimental Devices
11:00 AM-12:00 PM Optical manipulation and electrical control of excitons and valleys in 2D materials - Xiaodong Xu, University of Washington
12:00-1:00 PM Lunch
1:00-2:00 PM MoS2 FET: Dielectric, contacts, and scaling - Peide Ye, Purdue University
2:00-3:00 PM Mechanical considerations for 2D materials when integrated into device - James Hone, Columbia University
3:00-3:20 PM Break
Circuits and Big Picture
3:20-4:20 PM New circuits and systems based on 2D materials, Tomas Palacios, Massachusetts Institute of Technology
4:20-4:30 AM Closing Remarks

© 2005 Device Research Conference
Site Design and Development by nordQ web design