Technical Program--Invited Presentations

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Technical Program—Invited Presentations

Invited speakers will present the latest developments in solid-state device technologies including organic and inorganic thin-film transistors, semiconducting nanowires, carbon nanotube and graphene devices, spin devices, oxide-based memories, wide bandgap devices, LEDs, III-V-on-Si transistors, SiGe HBTs and THz devices.

Partial List of Invited Speakers:

David Awschalom, University of California at Santa Barbara
"The Diamond Age of Spintronics: Room Temperature Spin Control"

Robert Buhrman, Cornell University
"Spin Torque Writing for Next Generation MRAM - Challenges and Prospects"

Pascal Chevalier, ST Microelectronics
"Si/SiGe HBTs for Millimeter-Wave BiCMOS Technologies"

Suman Datta, Pennsylvania State University
"Compound Semiconductor as CMOS Channel Material: Déjà vu or New Paradigm?"

Nicolas Grandjean, Ecole Polytechnique Fédérale de Lausanne
"Room-Temperature Polariton Laser"

Tamotsu Hashizume, Hokkaido University
"Surface Control of AlGaN for the Stability Improvement of AlGaN/GaN HEMTs"

Kazuhiko Hirakawa, University of Tokyo
"Negative Differential Conductivities and Terahertz Gain in Bulk Semiconductors and Superlattices"

Joachim Knoch, IBM Zurich Research Laboratory
"One-Dimensional Nanoelectronic Device - Towards the Quantum Capacitance Limit"

Yoshio Nishi, Stanford University
"Recent Progress in Resistance Change Memory"

Steven Theiss, 3M
"Flexible Electronics: ZnO Based Integrated Circuitry and Active Matrix Display Backplanes"

Charles Tu, University of California at San Diego
"Materials and LED Properties of Dilute-Nitride GaNP/GaP Heterostructures"

Hong Zhang, Northrop Grumman
"High Performance Carbon Nanotube RF Electronics"