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Technical Program—Advance Program

Monday | Tuesday | Wednesday


Tuesday AM, June 25, 2013
Location: DeBartolo Hall Room 141
Session IV.A. Graphene II
Session Organizer: TBA
Session Chair(s): TBA
8:30 AM IV.A-Late News
A High Response MoS2-Graphene Hetero-Junction Photodetector with Broad Spectral Range
J. Y. Kwak1, J. Hwang1, M. Graham2, H. Alsalman1, N. Munoz1, B. Calderon1, D. Campbell1, and M. G. Spencer1, 1School of Electrical and Computer Engineering, Cornell University, Ithaca, New York, USA and 2Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, New York, USA
8:50 AM IV.A-1 Invited Paper
Graphene p-n Junctions for Electron-Optics Devices
S. Sutar, E. Comfort, and J. U. Lee, College of Nanoscale Science and Engineering, UAlbany-SUNY, Albany, New York, USA
9:30 AM IV.A-2 Student Paper
Reduction of Charge Transfer Region Using Graphene Nano-ribbon Geometry for Improved Complementary FET Performance at Sub-Micron Channel Length
M. J. Hollander1, N. Shukla1, N. Agrawal1, H. Madan1, J. A. Robinson2and S. Datta1, 1Department of Electrical Engineering and 2Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania, USA
9:50 AM IV.A-3 Student Paper
Evaluating the Scalability of Multilayer MoS2 Transistors
S. Das & J. Appenzeller, Birck Nanotechnology Center & Department of ECE, Purdue University, West Lafayette, Indiana, USA
10:10 AM Break  
 
 
Tuesday AM, June 25, 2013
Location: DeBartolo Hall Room 155
Session IV.B. Thin Film and Sensors
Session Organizer: TBA
Session Chair(s): TBA
8:30 AM IV.B-1 Late News
Is A Heterojunction Essential for High-Efficiency Organic Solar Cells?
B. Ray and M. A. Alam, School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana, USA
8:50 AM IV.B-1 Invited Paper
Increasing the Speed of Flexible Electronics
J.-H. Seo1, W. Zhou2, and Z. Ma1, 1Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin, USA and 2Department of Electrical Engineering, NanoFAB Center, University of Texas at Arlington, Arlington, Texas, USA
9:30 AM IV.B-2
Evaporation-Enhanced Impedance Sensing for Highly-Sensitive Differentiation of dsDNA from ssDNA
A. Ebrahimi and M. A. Alam, School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana, USA
9:50 AM IV.B-3 Student Paper
High Performance Bi2Se3 Nanowire Field-Effect Transistors
H. Zhu1,2, C. A. Richter1, E. Zhao3, J. E. Bonevich4, H.-J. Jang1, H.i Yuan1,2, H. Li1,2, A. Arab2, O. Kirillov1,W. A. Kimes5, J. E. Maslar5, and Q. Li1,2, 1Semiconductor and Dimensional Metrology Division, National Institute of Standards and Technology, Gaithersburg, Maryland, USA, 2Department of Electrical and Computer Engineering, 3School of Physics, Astronomy, and Computational Sciences, George Mason University, Fairfax, Virginia, USA , 4Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland, USA, and 5Chemical and Biochemical Reference Data Division, National Institute of Standards and Technology, Gaithersburg, Maryland, USA
10:10 AM Break
10:30 AM IV.B-4 Student Paper
Dual-Gate MOSFETs on Monolayer CVD MoS2 Films
H. Liu1, M. Si1, S. Najmaei2, A. T. Neal1, Y. Du1, P. M. Ajayan2, J. Lou2 and P. D. Ye1, 1School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana, USA and 2Dept. of Mechanical Engineering and Materials Science, Rice University, Houston, Texas, USA
10:50 AM IV.B-5 Student Paper
InGaZnO TFTs on a Flexible Membrane Transferred to a Curved Surface with a Radius of 2 mm
N. Münzenrieder, G. A. Salvatore, T. Kinkeldei, L. Petti, C. Zysset, L. Büthe, and G. Tröster, Electronics Laboratory, Swiss Federal Institute of Technology, Zurich, SWITZERLAND
11:10 AM IV.B-6 Student Paper
Tri-layer PEALD ZnO Thin Film Transistors and Circuits
Y. V. Li1,2, K. G. Sun1,2, J. I. Ramirez1,2 and T. N. Jackson1,2, 1Center for Thin Film Devices and Materials Research Institute and 2Department of Electrical Engineering, Penn State University, University Park, PA 16802 USA
11:30 AM IV.B-7  
Zinc Oxide Ring Oscillators with Vertical Thin Film Transistors
S. F. Nelson and L. W. Tutt, Kodak Technology Center, Eastman Kodak Company, Rochester New York, USA
11:50 AM IV.B-8 Student Paper
Effects of Gamma-Ray Irradiation and Electrical Stress on ZnO Thin Film Transistors
J. I. Ramirez1,2, Y. V. Li1,2, H. Basantani1,3, and T. N. Jackson1,2, 1 Center for Thin Film Devices and Materials Research Institute, 2Department of Electrical Engineering, Penn State University, University Park, Pennsylvania, USA, and 3Department of Engineering Science and Mechanics, Penn State University, University Park, Pennsylvania, USA
Tuesday AM, June 25, 2013
Location: DeBartolo Hall Room 102
Session IV.C. Spin/Memory
Session Organizer: TBA
Session Chair(s): TBA
10:50 AM IV.C-1
High fMAX/fT Ratio in Multi-Finger Embedded T-Shaped Gate Graphene Transistors
S.-J. Han, S. Oida, K. A. Jenkins, D. D. Lu, IBM T.J. Watson Research Center, Yorktown Heights, New York, USA
11:10 AM IV.C-2 Student Paper
Design Considerations for FE-Charge DRAM-Flash Hybrid Memory
K. Auluck, S. R. Rajwade and E. C. Kan, School of Electrical and Computer Engineering, Cornell University, Ithaca, New York, USA
11:30 AM IV.C-3 Student Paper
Validation and Extension of the Temperature Extraction Method of Conductive Filaments in Resistive Switching Materials
E. Yalon, A. Gavrilov, S. Cohen, and D. Ritter, Department of Electrical Engineering, Technion, Israel Institute of Technology, Haifa, ISRAEL
11:50 AM IV.C-4  
Forming Voltage Scaling of Resistive Switching Memories
A. Chen, TD Research, GLOBALFOUNDRIES, Sunnyvale, California, USA
Tuesday PM, June 25, 2013
Location: DeBartolo Hall Room 102
Session V.A Optoelectronic Devices
Session Organizer: TBA
Session Chair(s): TBA
1:30 PM V.A-1 Invited Paper
Single Photon Avalanche Diodes
J. C. Campbell, University of Virginia, Charlottesville, Virginia, USA
2:10 PM V.A-2 Student Paper
3.4 µm Diode Lasers Employing Al-Free GaInAsSb/GaSb MQW Active Regions at 20 °C
H. P. Nair, R. Salas, N. T. Sheehan, S. J. Maddox and S. R. Bank, Microelectronics Research Center, Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas, USA
2:30 PM V.A-3 Invited Paper
Cavity optomechanics and cavity optoelectromechanics
H. Tang, School of Engineering and Applied Science, Yale University, New Haven, Connecticut, USA
3:10 PM Break
 
 
Tuesday PM, June 25, 2013
Location: DeBartolo Hall Room 141
Session V.B Transistors
Session Organizer: TBA
Session Chairman: TBA
1:30 PM V.B-1 Invited Paper
Si based Tunneling Field Effect Transistors and Inverters
S. Mantl1, L. Knoll1, S. Richter1, M. Schmidt1, S. Wirths1, A. Nichau1, A. Schäfer1, S. Blaeser1, S. Trellenkamp1, J.-M. Hartmann2, K. K. Bourdelle3, D. Buca1 and Q.-T. Zhao1, 1P. Grünberg Institut 9 (PGI-9/IT), JARA-FIT, Forschungszentrum Jülich, Jülich, GERMANY, 2CEA, LETI, MINATEC Campus,Grenoble, FRANCE, and 3SOITEC, Bernin, FRANCE
2:10 PM V.B-2 Student Paper
High Linearity Nanowire Channel GaN HEMTs
D. S. Lee1, H. Wang1, A. Hsu1, M. Azize1, O. Laboutin2, Y. Cao2, W. Johnson2, E. Beam3, A. Ketterson3, M. Schuette3, P. Saunier3, and T. Palacios1, 1MIT Microsystems Technology Laboratory, Cambridge, Massachusetts, USA, 2IQE KC LLC, Taunton, Massachusetts, USA, and 3Triquint Semiconductor Inc., Richardson, Texas, USA
2:30 PM V.B-3
N-polar GaN/InAlN/AlGaN MIS-HEMTs with 1.89 S/mm extrinsic transconductance, 4 A/mm drain current, 204 GHz fT and 405 GHz fmax
D. Denninghoff*, J. Lu, E. Ahmadi, S. Keller and U. K. Mishra, Department of Electrical and Computer Engineering, University of California, Santa Barbara, California, USA *Now with Teledyne Scientific & Imaging LLC, Thousand Oaks, California, USA
2:50 PM V.B-4  
Normally-Off GaN-on-Si Transistors Enabling Nanosecond Power Switching at One Kilowatt
R. Chu, B. Hughes, M. Chen, D. Brown, R. Li, S. Khalil, D. Zehnder, S. Chen, A. Williams, A. Garrido, M. Musni, and K. Boutros, HRL Laboratories LLC, Malibu, California, USA
3:10 PM Break

3:30 PM V.B-5 Invited Paper
CMOS scaling in the single digit nodes
M. A. Guillorn, Thomas J. Watson Research Center, Yorktown Heights, New York, USA
4:10 PM VB-6 Student Paper
GaN Heterostructure Barrier Diodes (HBD) with Polarization-Induced Delta-Doping
P. Zhao, A. Verma, J. Verma, H. Xing, P. Fay and D. Jena, Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana, USA
4:30 PM V.B-7 Student Paper
SrTiO3/GdTiO3 Heterostructure Field Effect Transistors
O. F. Shoron1, M. Boucherit1, C. A. Jackson2, P.Moetakef2, S. Stemmer2 and S. Rajan1, 1Electrical and Computer Engineering Department, The Ohio State University, Columbus, Ohio, USA and 2Materials Department, University of California, Santa Barbara, California, USA
4:50 PM V.B-8  
Nanomembrane ß-Ga2O3 High-Voltage Field Effect Transistors
W. S. Hwang1,2, A. Verma1, V. Protasenko1, Sergei Rouvimov1, H. Xing1, A.Seabaugh1, W. Haensch2, C. Van de Walle3, Z. Galazka4, M. Albrecht4, R. Forrnari4, and D. Jena1, 1Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana, USA, 2IBM T. J. Watson Research Center, Yorktown Heights, New York, USA, 3Materials Department, University of California Santa Barbara, California, USA, and 4Leibniz Institute for Crystal Growth, Berlin, GERMANY
5:10 PM V.B-9 Student Paper
Steep Subthreshold Slope Nanoelectromechanical Field-Effect Transistors with Nanowire Channel and Back Gate Geometry
J.-H. Kim, Z. C. Y. Chen, S. Kwon and J. Xiang, Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, California, USA
5:30 PM V.B-10 Late News
Formation of Sub-10 nm width InGaAs finFETs of 200 nm Height by Atomic Layer Epitaxy
D. Cohen-Elias1, J .J .M. Law1, H. W. Chiang1, A. Sivananthan1, C. Zhang1, B. J. Thibeault1, W. J. Mitchell1, S. Lee1, A. D. Carter1, C.-Y. Huang1, V. Chobpattana2, S. Stemmer2, S. Keller1, and M. J. W. Rodwell1, 1ECE Department and 2Materials Department, University of California, Santa Barbara, California, USA
Tuesday PM, June 25, 2013
Location: DeBartolo Hall Room 155
Session V.C GaN
Session Organizer: TBA
Session Chairman: TBA
3:30 PM V.C-1 Invited Paper
GaN Devices for Sub-Millimeter-Wave MMIC and High-Speed Low-Loss Power Switch Applications
K. Shinohara, HRL Laboratories, Malibu, California, USA
4:10 PM V.C-2 Student Paper
Red-emitting InGaN/GaN Quantum Dot Laser
T. Frost, A. Banerjee, and P. Bhattacharya, Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan, USA
4:30 PM V.C-3 Late News
Depletion-mode Ga2O3 MOSFETs
M. Higashiwaki1, K. Sasaki2,1, T. Kamimura1, M. H. Wong1, D. Krishnamurthy1, A. Kuramata2, T. Masui3, and S. Yamakoshi2, 1National Institute of Information and Communications Technology (NICT), Tokyo, JAPAN, 2Tamura Corporation, Saitama, JAPAN, and 3Koha Co., Ltd, Tokyo, JAPAN
4:50 PM V.C-4 Late News
Dynamic Response of Amorphous In-Ga-Zn-O Thin-Film Transistors for 8K×4K Flat-Panel Display
R. Zhang, L. Bie, E. Yu and J. Kanicki, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan, USA
5:10 PM V.C-5 Late News
Room-Temperature Quantum Oscillations in Ge Junctionless MOSFETs at the Scaling Limit
H. Wu, J. Y. Zhang, J. J. Gu, L. Dong, N. J. Conrad, and P. D. Ye, School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana, USA
5:30 PM V.C-6 Late News
Narrow-Channel Accumulated-Body Bulk Si MOSFETs with Wide-Range Dynamic Threshold Voltage Tuning
M. B. Akbulut1, F. Dirisaglik1, A. Cywar1, A. Faraclas1, D. Pence1, J. Patel2, S. Steen2, R. Nunes2, H. Silva1, and A. Gokirmak1, 1Electrical & Computer Engineering, University of Connecticut , Storrs, Connecticut, USA and 2IBM Thomas J. Watson Research Center, Yorktown Heights, New York, USA
Tuesday PM, June 25, 2013
Rump Sessions
Click here for abstracts.
8:30 PM R-1
Integrated NV memory for Next Generation Computing
Location: McKenna Hall, Auditorium

Session Organizer(s):
Sayeef Salahuddin, UC Berkeley


Panelists:
Khandker Nazrul Quader, ScanDisk
An Chen, GlobalFoundries
Gurtej Sandhu, Micron Technology Inc.

Non-volatile memory has been well served, to date, with traditional flash memory. A range of new concepts, however, have been explored with a range of price, speed, and lifetime advantages. What is the next generation of non-volatile going to look like?
8:30 PM R-2
The next 50 Years
Location: McKenna Hall, Lower Level

Organizer(s):
Seth Bank, UT Austin
Debdeep Jena, Notre Dame

Panelists:
Mark Lundstrom, Purdue
Alan Seabaugh, Notre Dame
Steve Koester, University of Minnesota
Yong Chen, Purdue
Kirsten Moselund, IBM Zurich


The panel will ‘discuss' what’s next (if anything!) after the transistor: "The transistor and its scaling has led to a revolution in electronic devices that has touched each part of our economy and society. Looking forward to the next 50 years, which devices hold the potential to similarly re-invent the world, and what will those changes be?”

Monday | Tuesday | Wednesday




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