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| Technical Program—Advance Program |
Monday | Tuesday | Wednesday
Tuesday AM, June 23, 2009
Location: Main Level Dean’s Hall I |
Session IV.A. High Speed Devices
Session Organizer: TBA
Session Chair(s): Miguel Urteaga, Teledyne and Keisuke Shinohara, HRL Laboratories
|
| 8:20 AM |
IV.A-1 Invited Paper
Narrow Band Gap III-V based-FET for Ultra Low Power High Frequency Analog Applications
G. Dambrine1, S. Bollaert1, Y. Roellens1, A. Noudeviwa1, F. Danneville1, A. Olivier1, N. Wichmann1, L. Desplanque1, X. Wallart1,J. Grahn2, G. Moschetti2, P.-Ĺ. Nilsson2, M. Malmkvist2, and E. Lefebvre2,1 IEMN, CNRS, University of Lille1, Villeneuve d’Ascq, France, and 2Microwave Electronics laboratory, Department of Microtechnology and Nanoscience (MC2) Chalmers University of Technology, Göteborg, Sweden |
| 9:00 AM |
IV.A-2 Student Paper
AlxSiyNz Passivated AlGaN/GaN High Electron Mobility Transistors
R. J. Brown, E. Harvard, and J. R. Shealy, Cornell University, School of Electrical and Computer Engineering, Ithaca, New York. USA
|
| 9:20 AM |
IV.A-3 Student Paper
Seamless On-wafer Integration of GaN HEMTs and Si(100) MOSFETs
J.W. Chung1, J. Lee1, E.L. Piner2, and T. Palacios1, 1Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts, USA and
2Nitronex Corporation, Durham, North Carolina, USA
|
| 9:40 AM |
IV.A-4 Student Paper
High performance MBE-grown N-face microwave GaN HEMTs with >70% PAE
M. H. Wong1, Y. Pei1, D. F. Brown1, S. Keller1, J. S. Speck2 and U. K. Mishra1
1Electrical and Computer Engineering and 2Materials Departments, University of California, Santa Barbara, California, USA
|
| 10:00 AM |
Break |
| 10:20 AM |
IV.A-5 Invited Paper
Sb-based n- and p-channel HFETs for High-Speed, Low-Power Applications
J. B. Boos, B. R. Bennett, N. A. Papanicolaou, M.G. Ancona, J. G. Champlain, D. Park,
W. Kruppa, B. D. Weaver, R. Bass, and B. V. Shanabrook, Naval Research Laboratory, Washington, District of Columbia, USA
|
| 11:00 AM |
IV.A-6
High Performance Monolithic InP HBT-HEMT Integration
W. Ha, M. Urteaga, Z. Griffith, R. Pierson, P. Rowell, P. Chen and B. Brar, Teledyne Scientific Company, Thousand Oaks, California, USA
|
| 11:20 AM |
IV.A-7
High Current Operation of Enhancement-Mode GaN MIS-HEMTs with Triple Cap Structure Using Atomic Layer Deposited Al2O3 Gate Insulator
M. Kanamura, T. Ohki, T. Kikkawa, K. Imanishi, T. Imada and N. Hara, Fujitsu Laboratories Ltd., Atsugi, Kanagawa, Japan
|
| 11:40 AM |
IV.A-8
60-nm GaN/AlGaN DH-HEMTs with 1.0 O•mm Ron, 2.0 A/mm Idmax, and 153 GHz fT
K. Shinohara, I. Milosavljevic, S. Burnham, A. Corrion, P. Hashimoto, D. Wong, M. Hu, C. Butler, A. Schmitz, P.J. Willadsen, K.S. Boutros, H. Kazemi, and M. Micovic, HRL Laboratories LLC, Malibu, California, U.S.A.
|
Tuesday AM, June 23, 2009
Location: Main Level Dean’s Hall II |
Session IV.B. Thin Film Devices
Session Organizer: TBA
Session Chair(s): Shelby Nelson, Eastman-Kodak and Burhan Bayraktaroglu, Air Force Research Laboratory
|
| 8:20 AM |
IV.B-1 Invited Paper
Short Channel Vertical Transistors with Excellent Saturation Characteristics
M. Moradi1, A. Nathan1,2, H. M. Haverinen3, G. E. Jabbour3, 1IGNIS Innovation Inc., Kitchener, Ontario, Canada, 2London Centre for Nanotechnology, University College London, London, UK, and 3School of Materials, Arizona State University, Tempe, Arizona, USA
|
| 9:00 AM |
IV.B-2
Microwave ZnO Thin Film Transistors on Si Substrates
B. Bayraktaroglu, K. Leedy, and R. Neidhard, Air Force Research Laboratory, Sensors Directorate, Wright Patterson AFB, Ohio, USA
|
| 9:20 AM |
IV.B-3 Student Paper
Flexible Plastic Substrate ZnO Thin Film Transistor Circuits
D. A. Zhao1,2, D. A. Mourey1,3, and T. N. Jackson1,2, 1Center for Thin Film Devices and Materials Research Institute, 2Department of Electrical Engineering, Penn State University, University Park, Pennsylvania, USA, and 3Department of Materials and Science Engineering, Penn State University, University Park, Pennsylvania, USA
|
| 9:40 AM |
IV.B-4 Student Paper
Low-Voltage Metal-Gate Top-Contact Organic Thin-Film Transistors and Complementary Inverters with Submicron Channel Length
F. Ante1, U. Zschieschang1, R. T. Weitz1, D. Kälblein1, K. Kern1,2, H. Klauk1, 1Max Planck Institute for Solid State Research, Stuttgart, Germany and 2Ecole Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
|
| 10:00 AM |
Break |
| 10:20 AM |
IV.B-5
Deterministic and Continuous Control of the Threshold Voltage and Noise Margin of Organic Thin-Film Transistors and Organic Complementary Circuits using Mixed Phosphonic Acid Self-Assembled Monolayer Gate Dielectrics
U. Zschieschang1, F. Ante1, M. Schlörholz2, K. Kern1,3, and H. Klauk1, 1Max Planck Institute for Solid State Research, Stuttgart, Germany, 2Zehntstr. 16, Plankstadt, Germany, and 3Ecole Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
|
| 10:40 AM |
IV.B-6 Student Paper
Complementary Thin Film Electronics Based on ZnO/ZnTe
W. E. Bowen, W. Wang, and J. D. Phillips, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan, USA
|
| 11:00 AM |
IV.B-7 Student Paper
All Printed Self-Aligned Organic Transistors for Low Cost RFID Applications
H.-Y. Tseng and V. Subramanian, Department of Electrical Engineering and Computer Science, University of California, Berkeley, Berkeley, California, USA
|
| 11:20 AM |
IV.B-8 Student Paper
Self-Aligned-Gate PEALD ZnO TFT Circuits
D. A. Mourey1,2, D. A. Zhao1,3, and T. N. Jackson1,3, 1Center for Thin Film Devices and Materials Research Institute, 2Department of Materials and Science Engineering, Penn State University, University Park, Pennsylvania, USA, and 3Department of Electrical Engineering, Penn State University, University Park, Pennsylvania, USA
|
| 11:40 AM |
IV.B-9 Student Paper
Optimum Low-Gate-Field and High-Gate-Field Stability of Amorphous Silicon Thin-Film
Transistors with a Single Plastic-Compatible Gate Nitride Deposition Process
B. Hekmatshoar, S. Wagner and J. C. Sturm, Princeton Institute for the Science and Technology of Materials (PRISM) and the Department of Electrical Engineering, Princeton University, Princeton, New Jersey, USA
|
Tuesday PM, June 23, 2009
Location: Main Level Dean's Hall I |
Session V.A Graphene Devices
Session Organizer: TBA
Session Chair(s): Jeong Moon, HRL and Mathieu Luisier, Purdue University
|
| 1:30 PM |
V.A-1 Invited Paper
Scattering Mechanisms in Graphene
M. S. Fuhrer J.-H. Chen, C. Jang, S. Cho, S. Xiao, M. Ishigami, W. G. Cullen, and E. D. Williams, Center for Nanophysics and Advanced Materials and Materials Research Science and Engineering Center, Department of Phsyics University of Maryland at College Park, College Park, Maryland, USA
|
| 2:10 PM |
V.A-2
Epitaxial Graphene RF Field-Effect Transistors
J. S. Moon1, D. Curtis1, M. Hu1, D. Wong1, C. McGuire1 P. M. Campbell2, G. Jernigan2, J. Tedesco2, B. VanMil2, R. Myers-Ward2, C. Eddy, Jr.2, and D. K. Gaskill2, and P. Asbeck3, 1HRL Laboratories, Malibu, California, USA, 2Naval Research Laboratories, Washington, District of Columbia, USA, and 3University of California at San Diego, La Jolla, California, USA
|
| 2:30 PM |
V.A-3 Student Paper
Scaling Analysis of Graphene Nanoribbon Tunnel-FETs
Y. Khatami and K. Banerjee, Department of Electrical and Computer Engineering, University of California, Santa Barbara, California, USA
|
| 2:50 PM |
V.A-4
Multi-layer Graphene Field-effect Transistors for Improved Device Performance
Y. Sui and J. Appenzeller, School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana, USA
|
| 3:10 PM |
Break |
| 3:30 PM |
V.A-5
Performance limitations of graphene nanoribbon tunneling FETS due to line edge roughness
M. Luisier and G. Klimeck, Network for Computational Nanotechnology, Purdue University, West Lafayette, Indiana, USA
|
| 3:50 PM |
V.A-6 Student Paper
Gigahertz Operation of Epitaxial Graphene Transistors
K. Tahy1, D. Shilling1, T. Zimmermann1, H. Xing1, P. Fay1, Luxmi2, R. M. Feenstra2 and D. Jena1, 1Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana, USA and
2Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania, USA
|
| 4:10 PM |
V.A-7 Student Paper
Planar Tunnel Junction Fabrication and Bandgap Engineering on Bilayer Graphene
C. Puls, N. Staley, and Y. Liu, Physics Department, The Pennsylvania State University, University Park, Pennsylvania, USA
|
| 4:30 PM |
V.A-8 Student Paper
High Field Transport Properties of 2D and Nanoribbon Graphene FETs
K. Tahy1, S. Koswatta2, T. Fang1, Q. Zhang1, H. Xing1, and D. Jena1, 1Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana, USA, and 2IBM T. J. Watson Research Center, Yorktown Heights, New York, USA
|
Tuesday PM, June 23, 2009
Location: Main Level Dean's Hall II |
Session V.B Opto Electronic Devices
Session Organizer: TBA
Session Chairman: Patrick Lo Guo-Qiang, IME Singapore and Bernardette Kunert, NAsP III/V GmbH, Marburg, Germany |
| 1:30 PM |
V.B-1 Invited Paper
Terahertz quantum cascade lasers and video-rate THz imaging
Q. Hu, Department of EECS, MIT, Cambridge, Massachusetts, USA |
| 2:10 PM |
V.B-2
Laser operation of the III/V compound material Ga(NAsP) grown lattice matched on (001) Si substrate
B. Kunert1, S. Liebich1, S. Zinnkann1, I. Neméthv, R. Fritz1, K. Volz1, W. Stolz1, C. Lange2, N. S. Koester2, D. J. Franzbach2, S. Chatterjee2, W. W. Rühle2, N. C. Gerhardt3, N. Koukourakis3, and M. Hofmann3, 1NAsP III/V GmbH, Marburg, Germany, Material Sciences Center and Faculty of Physics, Philipps-University Marburg, Germany, 2Faculty of Physics, Philipps University Marburg, Germany, and 3Photonics and Terahertz Technology, Ruhr-University, Bochum, Germany |
| 2:30 PM |
V.B-3
An on-demand, discrete entangled photon source using optical coherent control in a quantum dot microcavity
A. Muller and G. S. Solomon, Joint Quantum Institute, NIST and University of Maryland, Gaithersburg, Maryland, USA |
| 2:50 PM |
V.B-4 Student Paper
Nanoscale Coherent Light Sources on GaAs and Si Using Single Rolled-up InGaAs/GaAs Quantum Dot Microtubes
F. Li, S. Vicknesh, and Z. Mi, Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec, Canada |
| 3:10 PM |
Break
|
| 3:30 PM |
V.B-5 Invited Paper
Solar Photovoltaics Technology: The Revolution Begins . . .
L. L. Kazmerski, National Renewable Energy Laboratory, Golden, Colorado, USA |
| 4:10 PM |
VB-6 Student Paper
Characteristics of Staggered InGaN Quantum Wells Light-Emitting Diodes Emitting at 480-525 nm
H. Zhao1, G. S. Huang1, G. Liu1, X. Li1, J. D. Poplawsky2, S. T. Penn2, V. Dierolf2, and N. Tansu1, 1Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University and 2Center for Optical Technologies, Department of Physics, Lehigh University, Bethlehem, Pennsylvania, USA
|
| 4:30 PM |
V.B-7 Student Paper
Linear Phase Demodulation using an Integrated Coherent Receiver with an Ultra-Compact Grating Beam Splitter
C.-H. Chen, A. Ramaswamy, L. A. Johansson, N. Nunoya, J. Klamkin, J. E. Bowers, and L. A. Coldren, ECE and Material Dept., University of California at Santa Barbara, Santa Barbara, California, USA
|
| Tuesday PM, June 23, 2009 |
Rump Sessions
Click here for abstracts.
|
| 8:30 PM |
R-1
Steep Slope or Slippery Slope
Location: 101 Thomas
Session Organizers:
Heike Riel, IBM Zurich
Suman Datta, Penn State University
Panelists:
Alan Seabaugh, Notre Dame
Joerg Appenzeller, Purdue University
|
| 8:30 PM |
R-2
Watt's New?
Location: 102 Thomas
Organizers:
Diana Huffaker, UCLA
Dimitri Pavlidis, Technical University Darmstadt
Panelists:
Lawrence Kazmerski , National Renewable Energy Laboratory
Bruce Gnade , University of Texas at Dallas
Jerry Woodall, Purdue University
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Monday | Tuesday | Wednesday
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