 |
Home
Call for Papers
Abstract Submission
Conference Information
Technical Program
Plenary Session
Invited Presentations
Rump Sessions
Social Events
Short Course
Advance Program
EMC
Presenter Information
Committee
|
 |
| Technical ProgramAdvance Program |
Monday | Tuesday | Wednesday
Monday AM, June 22, 2009
Location: TBA |
Plenary Session
Session Organizer: TBA
Session Chair: TBA |
| 8:20 AM |
Welcoming Remarks
Presentations: IEEE Fellows and Best Student Paper Awards |
| 9:00 AM |
I.-1 Plenary Paper
Racetrack Memory: a storage class memory based on current controlled magnetic domain wall motion
Stuart Parkin, IBM Almaden Research Center, San Jose, California, USA |
| 9:50 AM |
Break |
| 10:20 AM |
I.-2 Plenary Paper
Is There a Sweet Spot for Energy Harvesting ?
R. Vullers1, R.van Schaijk1, B. Gyselinckx1, C. Van Hoof1,2, 1IMEC/HOLST Centre, High-Tech Campus 31, Eindhoven, THE NETHERLANDS and 2IMEC, Leuven, BELGIUM |
| 11:10 AM |
I.-3 Plenary Paper
Reduce IC Power Consumption by >10x with a Green Transistor?
C. Hu, Dept. of EECS, University of California, Berkeley, California, USA |
Monday PM, June 22, 2009
Location: Main Level Dean's Hall I |
Session II.A. Tube and Wire Devices
Session Organizer: TBA
Session Chair(s): Curt Richter, NIST and Joerg Appenzeller, Purdue University |
| 1:30 PM |
II.A-1 Student Paper
InSb nanowire field-effect transistors - electrical characterization and material analysis
D. Candebat1, Y. Zhao2, C. Sandow1,3, B. Koshel4, C. Yang2,4, J. Appenzeller1, 1Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana, USA, 2Department of Physics, Purdue University, West Lafayette, Indiana, USA, 3Forschungszentrum Jülich GmbH, Jülich, GERMANY, and 4Department of Chemistry, Purdue University, West Lafayette, Indiana, USA |
| 1:50 PM |
II.A-2 Student Paper
Top-gated Ge-SixGe1-x core-shell nanowire field-effect transistors
with highly doped source and drain
J. Nah, E.-S. Liu, K. M. Varahramyan, D. Shahrjerdi, S. K. Banerjee, and E. Tutuc
Microelectronics Research Center, The University of Texas, Austin, Texas, USA |
| 2:10 PM |
II.A-3 Student Paper
Top-Gate ZnO Nanowire Transistors with Ultrathin Organic Gate Dielectric
D. Kälblein1, H. J. Böttcher1, R. T. Weitz1, U. Zschieschang1,2, K. Kern1,2, and H. Klauk1, 1Max Planck Institute for Solid State Research, Stuttgart, GERMANY and 2Ecole Polytechnique Fédérale de Lausanne, Lausanne, SWITZERLAND |
| 2:30 PM |
II.A-4 Student Paper
GaAs FET with a High Mobility Self-Assembled Planar Nanowire Channel on a (100) Substrate
S. A. Fortuna and X. Li, Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois, USA |
| 2:50 PM |
II.A-5
Comparing InSb, InAs, and InSb/InAs Nanowire MOSFETs
H. Nilsson, P. Caroff, E. Lind, C. Thelander, and L.-E. Wernersson, Solid State Physics, Lund University, Lund, SWEDEN |
| 3:10 PM |
Break |
| 3:30 PM |
II.A-6
VLS-grown Silicon Nanowire Tunnel FET
K. E. Moselund, H. Ghoneim, M. T. Björk, H. Schmid, S. Karg, E. Lörtscher, W. Riess, and H. Riel, IBM Research GmbH, Zurich Research Laboratory, Rüschlikon, SWITZERLAND |
| 3:50 PM |
II.A-7 Student Paper
Characterization and Modeling of Low Frequency Noise in Single-walled Carbon Nanotube Film-based Devices
A. Behnam, G. Bosman, and A. Ural, Electrical and Computer Engineering, University of Florida, Gainesville, Florida, USA |
| 4:10 PM |
II.A-8 Student Paper
Reduction of Hysteresis in Mobility Measurements of Carbon Nanotube Transistors by Pulsed I-V Characterization
D. Estrada, S. Dutta, A. Liao and E. Pop, Dept. of Electrical and Computer Engineering, University of Illinois, Urbana-Champaign, Urbana, Illinois, USA and Micro and Nanotechnology Lab, Urbana, Illinois, USA |
| 4:30 PM |
II.A-9
A 1.6 GHz NEMS Actuator Built from Carbon Nanotube Layer by Layer Composite Films
M. W. Jang1, M. Lu2, T. Cui2, and S. A. Campbell1, 1Dept of Electrical and Computer Eng and 2Dept of Mechanical Eng, University of Minnesota, Minneapolis Minnesota, USA |
Monday PM, June 22, 2009
Location: TBA |
Session II.B. Magnetic/Spin Devices
Session Organizer: Main Level Dean’s Hall II
Session Chair(s): Mingqiang Bao, UCLA and Ian Appelbaum, University of Maryland |
| 1:30 PM |
II.B-1 Invited Paper
Spin Torque MRAM - Challenges and Prospects
R. Buhrman, Center for Nanoscale Systems, Cornell University, Ithaca, New York, USA |
| 2:10 PM |
II.B-2 Student Paper
Electrical measurements of lateral spin transport in Si near a Si/SiO2 interface
H-J. Jang, B. Huang, and I. Appelbaum, Department of Physics and Center for Nanophysics and Advanced Materials, University of Maryland, College Park, Maryland, USA |
| 2:30 PM |
II.B-3
Electric control of magnetization via control of carriers’ spectrum anisotropy
A. Chernyshov1, M. Overby1, L. P. Rokhinson1, Y. Lyanda-Geller1, X. Liu2, J. K. Furdyna2, 1Department of Physics and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana, USA and 2Department of Physics, University of Notre Dame, Notre Dame, Indiana, USA |
| 2:50 PM |
II.B-4 Student Paper
Bias and Gate Control of Graphene Spin Valves
W. Han, W. H. Wang, K. Pi, K. M. McCreary, W. Bao, Yan Li, C. N. Lau, and R. K. Kawakami,
Department of Physics and Astronomy, University of California, Riverside, California, USA |
| 3:10 PM |
Break |
| 3:30 PM |
II.B-5 Invited Paper
Spin Polarized Lasers
P. Bhattacharya, D. Basu and D. Saha, Solid-State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan, USA |
| 4:10 PM |
II.B-6
A magnetic amplifier for amplifying spin-wave signal
M. Bao1, A. Khitun1, J. Lee1, A. P Jacob2, and K. L. Wang1 , 1Department of Electrical Engineering, University of California, Los Angeles, California, USA, and 2Intel Corporation, Santa Clara, California, USA |
| 4:30 PM |
II.B-7 Student Paper
High Speed Single Dopant Spin Manipulation with a Single Electrical Gate
V. Povilus1, J.-M. Tang2 and Michael E. Flatté1, 1Optical Science and Technology Center and Department of Physics, and Astronomy, The University of Iowa, Iowa City, Iowa, USA and 2Department of Physics, University of New Hampshire, Durham, New Hampshire, USA |
| 4:50 PM |
II.B-8
Late News
|
Monday PM, June 22, 2009
7:00 PM-10:00 PM
Location: Main Level Senate Suite |
Session III. Poster Session
Session Organizers: Erik Lind, Lund University and Nitin Samarth, Penn State University |
|
III-1 Student Paper
HfO2 Gated, Self Aligned and Directly Contacted Indium Arsenide Quantum-well
Transistors for Logic Applications – A Temperature and Bias Dependent Study
A. Ali1, S. Mookerjea1, E. Hwang1, S. Koveshnikov2,3, S. Oktyabrsky2, V. Tokranov2,
M. Yakimov2, R. Kambhampati2, W. Tsai3 and S. Datta1, 1The Pennsylvania State University, University Park, Pennsylvania, USA,2University at Albany – SUNY, Albany, New York, USA and 3Intel Corporation, Santa Clara, California, USA |
|
III-2 Student Paper
Double-Gate MOSFETs with Asymmetric Drain Underlap: A device-circuit co-design and
optimization perspective for SRAM
A. Goel1, S. Gupta1, A. Bansal2, M-H. Chiang3 and K. Roy1, 1School of Electrical and Computer Engineering, West Lafayette Indiana, USA, 2IBM T.J. Watson Research, Yorktown Heights, New York, USA and 3National Ilan University, Ilan, TAIWAN, R.O.C. |
|
III-3 Student Paper
Enhancement-Mode AlGaN/GaN HEMTs with High Linearity Fabricated by Hydrogen Plasma Treatment
B. Lu1, O. I. Saadat1, E. L. Piner2 and T. Palacios1, 1Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts, USA and 2Nitronex Corporation, Durham, North Carolina, USA |
|
III-4 Student Paper
High mobility solution-processible organic semiconductor: copper
tetrabenzoporphyrin
C.-G. Lee, J. W. Shim, A. Ohno, and A. Dodabalapur, Microelectronics Research Center, University of Texas at Austin, Austin, Texas, USA |
|
III-5
Modeling of Hole Tunneling in Polarization-based Contacts to Wurtzite p-type Gallium Nitride Using Thin Indium Gallium Nitride Caps
C. J. Praharaj and L. F. Eastman, Department of Electrical and Computer Engineering, Cornell University, Ithaca , New York, USA |
|
III-6
Extraction of interface trap density in high-k/Ge gate stacks and determination of the charge neutrality level
D. Bozyigit and C. Rossel, IBM Research GmbH, Zurich Research Laboratory, Rüschlikon, SWITZERLAND |
|
III-7 Student Paper
Bilayer pseudoSpin Field Effect Transistor (BiSFET): a proposed logic device and circuits
D. Reddy, L. F. Register, E. Tutuc, A. MacDonald and S. K. Banerjee, University of Texas, Austin, Texas, USA |
|
III-8 Student Paper
Indium Gallium Arsenide on Silicon Interband Tunnel Diodes for NDR-based memory and Steep Subthreshold Slope Transistor Applications
D. J. Pawlik1, P. Thomas1, M. Barth1, K. Johnson1, S.L. Rommel1, S. Mookerjea2, S. Datta2, M. Luisier3, G.Klimeck3, Z.Cheng4, J. Li4, J.S. Park4, J.M. Hydrick4, J.G. Fiorenza4, and A.Lochtefeld4, 1Department of Microelectronic Engineering, Rochester Institute of Technology, Rochester, New York, USA, 2Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania, USA, 3Network for Computational Nanotechnology, Purdue University West Lafayette, Indiana, USA, and 4Amberwave Systems Corporation, Salem, New Hampshire, USA |
|
III-9 Student Paper
Locally-Gated, Suspended Silicon Nanowire FETs for Biomolecular Sensing
D. A. Routenberg, N. K. Rajan, and M. A. Reed, Yale University, New Haven, Connecticut, USA |
|
III-10 Student Paper
Accurate Inversion Charge and Mobility Measurements in Enhancement-mode GaAs
Field-Effect Transistors with High-k Gate Dielectrics
D. Shahrjerdi, J. Nah, T. Akyol, M. Ramon, E. Tutuc, and S. K. Banerjee, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas, USA |
|
III-11
Atomistic deconstruction of clear performance advantages of a monolithically patterned wide-narrow-wide all-graphene FET
D. Unluer, F. Tseng, A. W. Ghosh, M. R. Stan, and C. L. Brown, ECE Department, University of Virginia, Charlottesville, Virginia, USA |
|
III-12
Absolute Control of Chirality Unnecessary for Wide-Narrow-Wide Graphene Field Effect Transistor
F. Tseng, D. Unluer, M.Stan, A.W. Ghosh, and C. L. Brown ECE Department, University of Virginia, Charlottesville, Virginia, USA |
|
III-13 Student Paper
Phase-Change Oscillations in Silicon Wires
G. Bakan, A. Cywar, K. Cil, F. Dirisaglik, H. Silva and A. Gokirmak, Department of Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut, USA |
|
III-14 Student Paper
A Physical 3-D Analytical Model for the Threshold Voltage Considering RDF
G. Panagopoulos and K. Roy, School of ECE, Purdue University, West Lafayette, Indiana, USA |
|
III-15 Student Paper
High performance self-aligned inversion-channel MOSFETs with In0.53Ga0.47As channel and ALD-Al2O3 gate dielectric
H. C. Chiu1, P. Chang1, M. L. Huang1, T. D. Lin1, Y. H. Chang1, J. C. Huang2, S. Z. Chen2, J. Kwo3, W. Tsai4, and M. Hong1, 1Dept. of Matls. Sci. and Eng., 2Ctr. for Nanotech., Matls. Sci., and Microsys., 3Dept of Phy., Natl. Tsing Hua Univ., HsinChu, Taiwan, R.O.C. ,and 4Intel Corp., Santa Clara, California |
|
III-16 Student Paper
Integrated Circuits based on Individual Carbon Nanotube Transistors on Glass Substrates
H. Ryu1, F. Ante1, D. Kälblein1, U. Zschieschang1, O. G. Schmidt2, H. Klauk1, 1Max Planck Institute for Solid State Research, Stuttgart, GERMANY and 2Faculty of Electrical Engineering and Information Technology, Chemnitz University of Technology, Chemnitz, GERMANY |
|
III-17 Student Paper
Insights and Optimizations of Tunnel Field-Effect Transistor Operation
H. S. Yu and C. O. Chui, Electrical Engineering Department, University of California, Los Angeles, California, USA |
|
III-18 Student Paper
HfO2-Based In0.53Ga0.47As MOSFETs (EOT˜10Å) Using Various Interfacial Dielectric Layers
H. Zhao, Y. Chen, J. Yum, Y. Wang, and J. C. Lee, Microelectronic Research Center, the University of Texas at Austin, Austin, Texas, USA |
|
III-19
On-State Characteristics of SiC Thyristors for the 8 – 20 kV Regime
G. G. Walden and J. A. Cooper, School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana, USA |
|
III-20
Analog and digital output lateral photodiodes fabricated by µ-Czochralski process at low temperature
J. Derakhshandeh, M. R. Tajari Mofrad, R. Ishihara and C.I.M Beenakker, Delft University of Technology, Delft Institute of Microsystems and Nanoelectronics (DIMES), ECTM, Delft, the Netherlands |
|
III-21 Student Paper
High-temperature electro-optical degradation of DC-Aged InGaN based high power GaN LEDs
S. M. Moon1, S. W. Chae2, and J. S. Kwak1, 1Department of Materials Science and Metallurgical Engineering, Sunchon National University, Chonnam, Korea and 2Opto System Laboratory, Samsung Electro-Mechanics Co., Suwon, Korea |
|
III-22 Student Paper
Ni-based self-aligned silicidation (SAS) process on source and drain for planar polysilicon TFT low-voltage flash memory cell
J. Lee1, J. J. Cha2, T. Naoi3, D. A. Muller2, R. B. van Dover3, H. Raza1, and E. Kan1, 1School of Electrical and Computer Engineering, Cornell University, Ithaca, New York, USA, 2School of Applied and Engineering Physics, Cornell University, Ithaca, New York, U.S.A., and 3Department of Material Science and Engineering, Cornell University, Ithaca, New York, U.S.A |
|
III-23 Student Paper
Bandgap dependence of band-to-band tunneling and defect-mediated excess currents
in SiGe/Si heterojunction tunnel diodes grown by RTCVD
J.-Y. Li1 and J. C. Sturm1, A. Majumdar2, I. Lauer2, and S. Koester2, 1Princeton Institute for the Science and Technology of Materials (PRISM) and the Department of Electrical Engineering, Princeton University, Princeton, New Jersey, USA and 2IBM Research Labs, Yorktown, New York, USA |
|
III-24 Student Paper
Polarization-Induced Zener Tunnel Junctions in Wide-Bandgap Heterostructures
J. Simon, Z. Zhang, K. Goodman, T. Kosel, P. Fay, and D. Jena, Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana, USA |
|
III-25 Student Paper
Thick Nano-Crystalline Diamond Overgrowth on InAlN/GaN Devices For Thermal Management
M. Dipalo1, M. Alomari1, J.-F. Carlin2, N. Grandjean2, M-A. Diforte-Poisson3, S. L. Delage3, E. Kohn1, 1University of Ulm, Ulm, Germany, 2EPFL, Lausanne, Switzerland, and 3Alcatel-Thales III-V Lab, Marcoussis, France |
|
III-26
Small-signal and 30-GHz power performance of AlGaN/GaN HFETs without back barriers
M. Higashiwaki, Y. Pei, R. Chu, and U. K. Mishra, Department of Electrical and Computer Engineering, University of California, Santa Barbara, California, USA |
|
III-27 Student Paper
Modeling and Performance Analysis of High-Speed, High-Power GaN Nanowire FETs
M. A. Khayer, and R. K. Lake, Laboratory for Terascale and Terahertz Electronics (LATTE), Department of Electrical Engineering, University of California, Riverside, California, USA |
|
III-28
Milliwatt Power 245 nm Deep Ultraviolet Light-Emitting Diodes
W. Sun, M. Shatalov, X. Hu, J. Yang, A. Lunev, Y. Bilenko, M. l. Shur, and R. Gaska, Sensor Electronic Technology, Inc, Columbia, South Carolina, USA |
|
III-29 Student Paper
Fermi-level unpinning on GaAs (111)A surface with direct ALD Al2O3
M. Xu, Y.Q. Wu and P. D. Ye, School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana, USA |
|
III-30
Steep Subthreshold Slope Nanowire FETs with Gate-Induced Schottky-Barrier Tunneling
Q. Li1,2, X. Zhu1,2, D. Ioannou1, J. Suehle2 and C. Richter2, 1Dept. of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia, USA and 2Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, Maryland, USA |
|
III-31 Student Paper
Metal Source/Drain Inversion-mode InP MOSFETs
S. H. Kim, S. Nakagawa, T. Haimoto, R. Nakane, M. Takenaka and S. Takagi, School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo, JAPAN |
|
III-32 Student Paper
Transparent driving thin-film transistor circuits based on uniformly grown singlewalled carbon nanotubes network
S. Kim1, S. Kim1, M. Xu1, L. Yu1, P. D. Ye1, D. B. Janes1, Sa. Ju2, and S. Mohammadi1, 1School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana, USA and 2Department of Physics, Kyonggi University, Suwon, Gyeonggi-Do, KOREA |
|
III-33
Investigation of Scattering Mechanisms in HfO2 gated Hall structures with In0.77Ga0.23As Quantum Well Channel
S. Oktyabrsky1, P. Nagaiah1, V. Tokranov1, R. Kambhampati1, M. Yakimov1, W. Tsai2,
and S. Koveshnikov1,2, 1University at Albany – SUNY, Albany, New York, USA and 2Intel Corporation, Santa Clara, California, USA |
|
III-34 Student Paper
Band-gap Engineered Hot Carrier Tunnel Transistors
S. Mookerjea and S. Datta, Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania, USA |
|
III-35 Student Paper
Preparation of ZnO nanowires/p-GaN nanoheterojunction arrays and their optoelectric characteristics under UV and solar lights
W-C. Tsai1, S-J. Wang1, C-R. Tseng1, W-I. Hsu1, and J-C. Lin2, 1Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan , TAIWAN, R.O.C. and 2Department of Electronics Engineering, St. John's University, Taipei , TAIWAN, R.O.C. |
|
III-36 Student Paper
Pressure and UV light sensitive electron field emission properties of lateral ZnO nanowires with an emitter-to-emitter configuration
W.-I. Hsu, S.-J. Wang, W.-C. Tsai, C.-R. Tseng, and W.-C. Hsu, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, TAIWAN, R.O.C. |
|
III-37 Student Paper
Achieving Nearly Free Fermi-Level Movement and Vth Engineering in
Ga2O3(Gd2O3)/In0.2Ga0.8As
T. D. Lin1, Y. D. Wu1, Y. C. Chang1, T. H. Chiang1, C. Y. Chuang2, C. A. Lin2, W. H. Chang1, H. C. Chiu1, W. Tsai3, J. Kwo2, and M. Hong1, 1Dept. of Materials Sci. and Eng., 2Dept. of Physics, National Tsing Hua Univ., Hsinchu, TAIWAN, R.O.C. and 3Intel Corporation, Santa Clara, California, USA |
|
III-38
Top-Down AlN/GaN Enhancement- & Depletion-mode Nanoribbon HEMTs
T. Zimmermann, Y. Cao, J. Guo, X. Luo, D. Jena, H. Xing, Electrical Engineering Department, University of Notre Dame, Notre Dame, Indiana, USA |
|
III-39 Student Paper
Axially-Doped Silicon Nanowire Field Effect Transistors for Real-Time Sensing in Physiologically Relevant Buffer Solutions
W. Hu1, X. Zhong1, T. Morrow2, C. D. Keating2, S. Eichfeld3, J. M. Redwing2, and Theresa S. Mayer1, Departments of 1Electrical Engineering, 2Chemistry, and 3Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania, USA |
|
III-40
High Mobility Ambipolar Field Effect Transistors Made From Large-Scale CVD Graphitic Thin Films
H. Cao1,2, Q. Yu4, I. Childres1,2, S. S. Pei4 and Y. P. Chen1,2,3, 1Department of Physics, Purdue University, West Lafayette, Indiana, USA, 2Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana, USA, 3School of Electrical and Computer Engineering, Purdue University, West Lafayette Indiana, and 4Center for Advanced Materials and Department of Electrical and Computer Engineering, University of Houston, Houston Texas, USA |
|
III-41 Student Paper
Amorphous silicon floating-gate thin film transistor
Y. Huang, B. Hekmatshoar, S. Wagner and J.C. Sturm, Princeton Institute for the Science and Technology of Materials (PRISM), Department of Elect. Eng., Princeton University, Princeton, New Jersey, USA |
|
III-42 Student Paper
Investigation of Thermally Robust Single-component Resistive Switching Organic Memory Cell
Y. Kuang1, R. Huang1, D. Wu1,Y. Tang1, Z. Yu1, Y. Ma2, L. Zhang1, P. Tang1, D. Gao1, Y. Wen2, and Y. Song2, 1Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing, P. R. China and 2Organic Solid Laboratory, Institute of Chemistry, Chinese Academy of Sciences, Beijing, P. R. CHINA |
|
III-43 Student Paper
Simulation of Electrical Characteristic Fluctuation in 16-nm FinFETs’ and Circuits
Y. Li, C.-H. Hwang, T.-Y. Li, and M.-H. Han, Department of Communication Engineering, National Chiao Tung University, Hsinchu, TAIWAN, R.O.C. |
|
III-44
Electrically Controlled Magnetic Memory and Programmable Logic Based on Graphene/Ferromagnet Hybrid Structures
Y. G. Semenov, J. M. Zavada and K. W. Kim, Dept. of Electrical & Computer Engineering, North Carolina State University, Raleigh, North Carolina, USA |
|
III-45 Student Paper
Hybrid TiN Nanocrystals/Si3N4 Nonvolatile Memory Featuring Low Voltage
Operation by Spinodal Phase Segregation
L.-L. Chen, C.-H. Chang, Y.-S. Lin, and Y.-H. Wu, Department of Engineering and System Science, National Tsing-Hua University, Hsinchu, TAIWAN, R.O.C. |
|
III-46 Student Paper
Sb-Heterostructure Backward Diode Detectors with Ultrathin Tunnel Barriers
Z. Zhang1, Ning Su2, R. Rajavel3, P. Deelman3, and P. Fay1, 1Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana, USA, 2IBM Semiconductor Research and Development, Hopewell Junction, New York, USA and 3HRL Laboratories LLC, Malibu, California, USA |
Monday | Tuesday | Wednesday
|
 |