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Technical Program—Advance Program

Monday | Tuesday | Wednesday

Monday AM, June 22, 2009 Location: TBA
Plenary Session Session Organizer: TBA Session Chair: TBA
8:20 AM	Welcoming Remarks Presentations: IEEE Fellows and Best Student Paper Awards
9:00 AM	I.-1 Plenary Paper Racetrack Memory: a storage class memory based on current controlled magnetic domain wall motion Stuart Parkin, IBM Almaden Research Center, San Jose, California, USA
9:50 AM	Break
10:20 AM	I.-2 Plenary Paper Is There a Sweet Spot for Energy Harvesting ? R. Vullers¹, R.van Schaijk¹, B. Gyselinckx¹, C. Van Hoof^1,2, ¹IMEC/HOLST Centre, High-Tech Campus 31, Eindhoven, THE NETHERLANDS and ²IMEC, Leuven, BELGIUM
11:10 AM	I.-3 Plenary Paper Reduce IC Power Consumption by >10x with a Green Transistor? C. Hu, Dept. of EECS, University of California, Berkeley, California, USA
Monday PM, June 22, 2009 Location: Main Level Dean's Hall I
Session II.A. Tube and Wire Devices Session Organizer: TBA Session Chair(s): Curt Richter, NIST and Joerg Appenzeller, Purdue University
1:30 PM	II.A-1 Student Paper InSb nanowire field-effect transistors - electrical characterization and material analysis D. Candebat¹, Y. Zhao², C. Sandow^1,3, B. Koshel⁴, C. Yang^2,4, J. Appenzeller¹, ¹Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana, USA, ²Department of Physics, Purdue University, West Lafayette, Indiana, USA, ³Forschungszentrum Jülich GmbH, Jülich, GERMANY, and ⁴Department of Chemistry, Purdue University, West Lafayette, Indiana, USA
1:50 PM	II.A-2 Student Paper Top-gated Ge-Si_xGe_1-x core-shell nanowire field-effect transistors with highly doped source and drain J. Nah, E.-S. Liu, K. M. Varahramyan, D. Shahrjerdi, S. K. Banerjee, and E. Tutuc Microelectronics Research Center, The University of Texas, Austin, Texas, USA
2:10 PM	II.A-3 Student Paper Top-Gate ZnO Nanowire Transistors with Ultrathin Organic Gate Dielectric D. Kälblein¹, H. J. Böttcher¹, R. T. Weitz¹, U. Zschieschang^1,2, K. Kern^1,2, and H. Klauk¹, ¹Max Planck Institute for Solid State Research, Stuttgart, GERMANY and ²Ecole Polytechnique Fédérale de Lausanne, Lausanne, SWITZERLAND
2:30 PM	II.A-4 Student Paper GaAs FET with a High Mobility Self-Assembled Planar Nanowire Channel on a (100) Substrate S. A. Fortuna and X. Li, Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois, USA
2:50 PM	II.A-5 Comparing InSb, InAs, and InSb/InAs Nanowire MOSFETs H. Nilsson, P. Caroff, E. Lind, C. Thelander, and L.-E. Wernersson, Solid State Physics, Lund University, Lund, SWEDEN
3:10 PM	Break
3:30 PM	II.A-6 VLS-grown Silicon Nanowire Tunnel FET K. E. Moselund, H. Ghoneim, M. T. Björk, H. Schmid, S. Karg, E. Lörtscher, W. Riess, and H. Riel, IBM Research GmbH, Zurich Research Laboratory, Rüschlikon, SWITZERLAND
3:50 PM	II.A-7 Student Paper Characterization and Modeling of Low Frequency Noise in Single-walled Carbon Nanotube Film-based Devices A. Behnam, G. Bosman, and A. Ural, Electrical and Computer Engineering, University of Florida, Gainesville, Florida, USA
4:10 PM	II.A-8 Student Paper Reduction of Hysteresis in Mobility Measurements of Carbon Nanotube Transistors by Pulsed I-V Characterization D. Estrada, S. Dutta, A. Liao and E. Pop, Dept. of Electrical and Computer Engineering, University of Illinois, Urbana-Champaign, Urbana, Illinois, USA and Micro and Nanotechnology Lab, Urbana, Illinois, USA
4:30 PM	II.A-9 A 1.6 GHz NEMS Actuator Built from Carbon Nanotube Layer by Layer Composite Films M. W. Jang¹, M. Lu², T. Cui², and S. A. Campbell¹, ¹Dept of Electrical and Computer Eng and ²Dept of Mechanical Eng, University of Minnesota, Minneapolis Minnesota, USA
Monday PM, June 22, 2009 Location: TBA
Session II.B. Magnetic/Spin Devices Session Organizer: Main Level Dean’s Hall II Session Chair(s): Mingqiang Bao, UCLA and Ian Appelbaum, University of Maryland
1:30 PM	II.B-1 Invited Paper Spin Torque MRAM - Challenges and Prospects R. Buhrman, Center for Nanoscale Systems, Cornell University, Ithaca, New York, USA
2:10 PM	II.B-2 Student Paper Electrical measurements of lateral spin transport in Si near a Si/SiO₂ interface H-J. Jang, B. Huang, and I. Appelbaum, Department of Physics and Center for Nanophysics and Advanced Materials, University of Maryland, College Park, Maryland, USA
2:30 PM	II.B-3 Electric control of magnetization via control of carriers’ spectrum anisotropy A. Chernyshov¹, M. Overby¹, L. P. Rokhinson¹, Y. Lyanda-Geller¹, X. Liu², J. K. Furdyna², ¹Department of Physics and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana, USA and ²Department of Physics, University of Notre Dame, Notre Dame, Indiana, USA
2:50 PM	II.B-4 Student Paper Bias and Gate Control of Graphene Spin Valves W. Han, W. H. Wang, K. Pi, K. M. McCreary, W. Bao, Yan Li, C. N. Lau, and R. K. Kawakami, Department of Physics and Astronomy, University of California, Riverside, California, USA
3:10 PM	Break
3:30 PM	II.B-5 Invited Paper Spin Polarized Lasers P. Bhattacharya, D. Basu and D. Saha, Solid-State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan, USA
4:10 PM	II.B-6 A magnetic amplifier for amplifying spin-wave signal M. Bao¹, A. Khitun¹, J. Lee¹, A. P Jacob², and K. L. Wang¹ , ¹Department of Electrical Engineering, University of California, Los Angeles, California, USA, and ²Intel Corporation, Santa Clara, California, USA
4:30 PM	II.B-7 Student Paper High Speed Single Dopant Spin Manipulation with a Single Electrical Gate V. Povilus¹, J.-M. Tang² and Michael E. Flatté¹, ¹Optical Science and Technology Center and Department of Physics, and Astronomy, The University of Iowa, Iowa City, Iowa, USA and ²Department of Physics, University of New Hampshire, Durham, New Hampshire, USA
4:50 PM	II.B-8 Late News
Monday PM, June 22, 2009 7:00 PM-10:00 PM Location: Main Level Senate Suite
Session III. Poster Session Session Organizers: Erik Lind, Lund University and Nitin Samarth, Penn State University
	III-1 Student Paper HfO₂ Gated, Self Aligned and Directly Contacted Indium Arsenide Quantum-well Transistors for Logic Applications – A Temperature and Bias Dependent Study A. Ali¹, S. Mookerjea¹, E. Hwang¹, S. Koveshnikov^2,3, S. Oktyabrsky², V. Tokranov², M. Yakimov², R. Kambhampati², W. Tsai³ and S. Datta¹, ¹The Pennsylvania State University, University Park, Pennsylvania, USA,²University at Albany – SUNY, Albany, New York, USA and ³Intel Corporation, Santa Clara, California, USA
	III-2 Student Paper Double-Gate MOSFETs with Asymmetric Drain Underlap: A device-circuit co-design and optimization perspective for SRAM A. Goel¹, S. Gupta¹, A. Bansal², M-H. Chiang³ and K. Roy¹, ¹School of Electrical and Computer Engineering, West Lafayette Indiana, USA, ²IBM T.J. Watson Research, Yorktown Heights, New York, USA and ³National Ilan University, Ilan, TAIWAN, R.O.C.
	III-3 Student Paper Enhancement-Mode AlGaN/GaN HEMTs with High Linearity Fabricated by Hydrogen Plasma Treatment B. Lu¹, O. I. Saadat¹, E. L. Piner² and T. Palacios¹, ¹Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts, USA and ²Nitronex Corporation, Durham, North Carolina, USA
	III-4 Student Paper High mobility solution-processible organic semiconductor: copper tetrabenzoporphyrin C.-G. Lee, J. W. Shim, A. Ohno, and A. Dodabalapur, Microelectronics Research Center, University of Texas at Austin, Austin, Texas, USA
	III-5 Modeling of Hole Tunneling in Polarization-based Contacts to Wurtzite p-type Gallium Nitride Using Thin Indium Gallium Nitride Caps C. J. Praharaj and L. F. Eastman, Department of Electrical and Computer Engineering, Cornell University, Ithaca , New York, USA
	III-6 Extraction of interface trap density in high-k/Ge gate stacks and determination of the charge neutrality level D. Bozyigit and C. Rossel, IBM Research GmbH, Zurich Research Laboratory, Rüschlikon, SWITZERLAND
	III-7 Student Paper Bilayer pseudoSpin Field Effect Transistor (BiSFET): a proposed logic device and circuits D. Reddy, L. F. Register, E. Tutuc, A. MacDonald and S. K. Banerjee, University of Texas, Austin, Texas, USA
	III-8 Student Paper Indium Gallium Arsenide on Silicon Interband Tunnel Diodes for NDR-based memory and Steep Subthreshold Slope Transistor Applications D. J. Pawlik¹, P. Thomas¹, M. Barth¹, K. Johnson¹, S.L. Rommel¹, S. Mookerjea², S. Datta², M. Luisier³, G.Klimeck³, Z.Cheng⁴, J. Li⁴, J.S. Park⁴, J.M. Hydrick⁴, J.G. Fiorenza⁴, and A.Lochtefeld⁴, ¹Department of Microelectronic Engineering, Rochester Institute of Technology, Rochester, New York, USA, ²Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania, USA, ³Network for Computational Nanotechnology, Purdue University West Lafayette, Indiana, USA, and ⁴Amberwave Systems Corporation, Salem, New Hampshire, USA
	III-9 Student Paper Locally-Gated, Suspended Silicon Nanowire FETs for Biomolecular Sensing D. A. Routenberg, N. K. Rajan, and M. A. Reed, Yale University, New Haven, Connecticut, USA
	III-10 Student Paper Accurate Inversion Charge and Mobility Measurements in Enhancement-mode GaAs Field-Effect Transistors with High-k Gate Dielectrics D. Shahrjerdi, J. Nah, T. Akyol, M. Ramon, E. Tutuc, and S. K. Banerjee, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas, USA
	III-11 Atomistic deconstruction of clear performance advantages of a monolithically patterned wide-narrow-wide all-graphene FET D. Unluer, F. Tseng, A. W. Ghosh, M. R. Stan, and C. L. Brown, ECE Department, University of Virginia, Charlottesville, Virginia, USA
	III-12 Absolute Control of Chirality Unnecessary for Wide-Narrow-Wide Graphene Field Effect Transistor F. Tseng, D. Unluer, M.Stan, A.W. Ghosh, and C. L. Brown ECE Department, University of Virginia, Charlottesville, Virginia, USA
	III-13 Student Paper Phase-Change Oscillations in Silicon Wires G. Bakan, A. Cywar, K. Cil, F. Dirisaglik, H. Silva and A. Gokirmak, Department of Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut, USA
	III-14 Student Paper A Physical 3-D Analytical Model for the Threshold Voltage Considering RDF G. Panagopoulos and K. Roy, School of ECE, Purdue University, West Lafayette, Indiana, USA
	III-15 Student Paper High performance self-aligned inversion-channel MOSFETs with In_0.53Ga_0.47As channel and ALD-Al₂O₃ gate dielectric H. C. Chiu¹, P. Chang¹, M. L. Huang¹, T. D. Lin¹, Y. H. Chang¹, J. C. Huang², S. Z. Chen², J. Kwo³, W. Tsai⁴, and M. Hong¹, ¹Dept. of Matls. Sci. and Eng., ²Ctr. for Nanotech., Matls. Sci., and Microsys., ³Dept of Phy., Natl. Tsing Hua Univ., HsinChu, Taiwan, R.O.C. ,and ⁴Intel Corp., Santa Clara, California
	III-16 Student Paper Integrated Circuits based on Individual Carbon Nanotube Transistors on Glass Substrates H. Ryu¹, F. Ante¹, D. Kälblein¹, U. Zschieschang¹, O. G. Schmidt², H. Klauk¹, ¹Max Planck Institute for Solid State Research, Stuttgart, GERMANY and ²Faculty of Electrical Engineering and Information Technology, Chemnitz University of Technology, Chemnitz, GERMANY
	III-17 Student Paper Insights and Optimizations of Tunnel Field-Effect Transistor Operation H. S. Yu and C. O. Chui, Electrical Engineering Department, University of California, Los Angeles, California, USA
	III-18 Student Paper HfO₂-Based In_0.53Ga_0.47As MOSFETs (EOT˜10Å) Using Various Interfacial Dielectric Layers H. Zhao, Y. Chen, J. Yum, Y. Wang, and J. C. Lee, Microelectronic Research Center, the University of Texas at Austin, Austin, Texas, USA
	III-19 On-State Characteristics of SiC Thyristors for the 8 – 20 kV Regime G. G. Walden and J. A. Cooper, School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana, USA
	III-20 Analog and digital output lateral photodiodes fabricated by µ-Czochralski process at low temperature J. Derakhshandeh, M. R. Tajari Mofrad, R. Ishihara and C.I.M Beenakker, Delft University of Technology, Delft Institute of Microsystems and Nanoelectronics (DIMES), ECTM, Delft, the Netherlands
	III-21 Student Paper High-temperature electro-optical degradation of DC-Aged InGaN based high power GaN LEDs S. M. Moon¹, S. W. Chae², and J. S. Kwak¹, ¹Department of Materials Science and Metallurgical Engineering, Sunchon National University, Chonnam, Korea and ²Opto System Laboratory, Samsung Electro-Mechanics Co., Suwon, Korea
	III-22 Student Paper Ni-based self-aligned silicidation (SAS) process on source and drain for planar polysilicon TFT low-voltage flash memory cell J. Lee¹, J. J. Cha², T. Naoi³, D. A. Muller², R. B. van Dover³, H. Raza¹, and E. Kan¹, ¹School of Electrical and Computer Engineering, Cornell University, Ithaca, New York, USA, ²School of Applied and Engineering Physics, Cornell University, Ithaca, New York, U.S.A., and ³Department of Material Science and Engineering, Cornell University, Ithaca, New York, U.S.A
	III-23 Student Paper Bandgap dependence of band-to-band tunneling and defect-mediated excess currents in SiGe/Si heterojunction tunnel diodes grown by RTCVD J.-Y. Li¹ and J. C. Sturm¹, A. Majumdar², I. Lauer², and S. Koester², ¹Princeton Institute for the Science and Technology of Materials (PRISM) and the Department of Electrical Engineering, Princeton University, Princeton, New Jersey, USA and ²IBM Research Labs, Yorktown, New York, USA
	III-24 Student Paper Polarization-Induced Zener Tunnel Junctions in Wide-Bandgap Heterostructures J. Simon, Z. Zhang, K. Goodman, T. Kosel, P. Fay, and D. Jena, Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana, USA
	III-25 Student Paper Thick Nano-Crystalline Diamond Overgrowth on InAlN/GaN Devices For Thermal Management M. Dipalo¹, M. Alomari¹, J.-F. Carlin², N. Grandjean², M-A. Diforte-Poisson³, S. L. Delage³, E. Kohn¹, ¹University of Ulm, Ulm, Germany, ²EPFL, Lausanne, Switzerland, and ³Alcatel-Thales III-V Lab, Marcoussis, France
	III-26 Small-signal and 30-GHz power performance of AlGaN/GaN HFETs without back barriers M. Higashiwaki, Y. Pei, R. Chu, and U. K. Mishra, Department of Electrical and Computer Engineering, University of California, Santa Barbara, California, USA
	III-27 Student Paper Modeling and Performance Analysis of High-Speed, High-Power GaN Nanowire FETs M. A. Khayer, and R. K. Lake, Laboratory for Terascale and Terahertz Electronics (LATTE), Department of Electrical Engineering, University of California, Riverside, California, USA
	III-28 Milliwatt Power 245 nm Deep Ultraviolet Light-Emitting Diodes W. Sun, M. Shatalov, X. Hu, J. Yang, A. Lunev, Y. Bilenko, M. l. Shur, and R. Gaska, Sensor Electronic Technology, Inc, Columbia, South Carolina, USA
	III-29 Student Paper Fermi-level unpinning on GaAs (111)A surface with direct ALD Al₂O₃ M. Xu, Y.Q. Wu and P. D. Ye, School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana, USA
	III-30 Steep Subthreshold Slope Nanowire FETs with Gate-Induced Schottky-Barrier Tunneling Q. Li^1,2, X. Zhu^1,2, D. Ioannou¹, J. Suehle² and C. Richter², ¹Dept. of Electrical and Computer Engineering, George Mason University, Fairfax, Virginia, USA and ²Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, Maryland, USA
	III-31 Student Paper Metal Source/Drain Inversion-mode InP MOSFETs S. H. Kim, S. Nakagawa, T. Haimoto, R. Nakane, M. Takenaka and S. Takagi, School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo, JAPAN
	III-32 Student Paper Transparent driving thin-film transistor circuits based on uniformly grown singlewalled carbon nanotubes network S. Kim¹, S. Kim¹, M. Xu¹, L. Yu¹, P. D. Ye¹, D. B. Janes¹, Sa. Ju², and S. Mohammadi¹, ¹School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana, USA and ²Department of Physics, Kyonggi University, Suwon, Gyeonggi-Do, KOREA
	III-33 Investigation of Scattering Mechanisms in HfO₂ gated Hall structures with In_0.77Ga_0.23As Quantum Well Channel S. Oktyabrsky¹, P. Nagaiah¹, V. Tokranov¹, R. Kambhampati¹, M. Yakimov¹, W. Tsai², and S. Koveshnikov^1,2, ¹University at Albany – SUNY, Albany, New York, USA and ²Intel Corporation, Santa Clara, California, USA
	III-34 Student Paper Band-gap Engineered Hot Carrier Tunnel Transistors S. Mookerjea and S. Datta, Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania, USA
	III-35 Student Paper Preparation of ZnO nanowires/p-GaN nanoheterojunction arrays and their optoelectric characteristics under UV and solar lights W-C. Tsai¹, S-J. Wang¹, C-R. Tseng¹, W-I. Hsu¹, and J-C. Lin², ¹Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan , TAIWAN, R.O.C. and ²Department of Electronics Engineering, St. John's University, Taipei , TAIWAN, R.O.C.
	III-36 Student Paper Pressure and UV light sensitive electron field emission properties of lateral ZnO nanowires with an emitter-to-emitter configuration W.-I. Hsu, S.-J. Wang, W.-C. Tsai, C.-R. Tseng, and W.-C. Hsu, Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan, TAIWAN, R.O.C.
	III-37 Student Paper Achieving Nearly Free Fermi-Level Movement and V_th Engineering in Ga₂O₃(Gd₂O₃)/In_0.2Ga_0.8As T. D. Lin^1, Y. D. Wu¹, Y. C. Chang¹, T. H. Chiang¹, C. Y. Chuang², C. A. Lin², W. H. Chang¹, H. C. Chiu¹, W. Tsai³, J. Kwo², and M. Hong¹, ¹Dept. of Materials Sci. and Eng., ²Dept. of Physics, National Tsing Hua Univ., Hsinchu, TAIWAN, R.O.C. and ³Intel Corporation, Santa Clara, California, USA
	III-38 Top-Down AlN/GaN Enhancement- & Depletion-mode Nanoribbon HEMTs T. Zimmermann, Y. Cao, J. Guo, X. Luo, D. Jena, H. Xing, Electrical Engineering Department, University of Notre Dame, Notre Dame, Indiana, USA
	III-39 Student Paper Axially-Doped Silicon Nanowire Field Effect Transistors for Real-Time Sensing in Physiologically Relevant Buffer Solutions W. Hu¹, X. Zhong¹, T. Morrow², C. D. Keating², S. Eichfeld³, J. M. Redwing², and Theresa S. Mayer¹, Departments of ¹Electrical Engineering, ²Chemistry, and ³Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania, USA
	III-40 High Mobility Ambipolar Field Effect Transistors Made From Large-Scale CVD Graphitic Thin Films H. Cao^1,2, Q. Yu⁴, I. Childres^1,2, S. S. Pei⁴ and Y. P. Chen^1,2,3, ¹Department of Physics, Purdue University, West Lafayette, Indiana, USA, ²Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana, USA, ³School of Electrical and Computer Engineering, Purdue University, West Lafayette Indiana, and ⁴Center for Advanced Materials and Department of Electrical and Computer Engineering, University of Houston, Houston Texas, USA
	III-41 Student Paper Amorphous silicon floating-gate thin film transistor Y. Huang, B. Hekmatshoar, S. Wagner and J.C. Sturm, Princeton Institute for the Science and Technology of Materials (PRISM), Department of Elect. Eng., Princeton University, Princeton, New Jersey, USA
	III-42 Student Paper Investigation of Thermally Robust Single-component Resistive Switching Organic Memory Cell Y. Kuang¹, R. Huang¹, D. Wu¹,Y. Tang¹, Z. Yu¹, Y. Ma², L. Zhang¹, P. Tang¹, D. Gao¹, Y. Wen², and Y. Song², ¹Key Laboratory of Microelectronic Devices and Circuits, Institute of Microelectronics, Peking University, Beijing, P. R. China and ²Organic Solid Laboratory, Institute of Chemistry, Chinese Academy of Sciences, Beijing, P. R. CHINA
	III-43 Student Paper Simulation of Electrical Characteristic Fluctuation in 16-nm FinFETs’ and Circuits Y. Li, C.-H. Hwang, T.-Y. Li, and M.-H. Han, Department of Communication Engineering, National Chiao Tung University, Hsinchu, TAIWAN, R.O.C.
	III-44 Electrically Controlled Magnetic Memory and Programmable Logic Based on Graphene/Ferromagnet Hybrid Structures Y. G. Semenov, J. M. Zavada and K. W. Kim, Dept. of Electrical & Computer Engineering, North Carolina State University, Raleigh, North Carolina, USA
	III-45 Student Paper Hybrid TiN Nanocrystals/Si₃N₄ Nonvolatile Memory Featuring Low Voltage Operation by Spinodal Phase Segregation L.-L. Chen, C.-H. Chang, Y.-S. Lin, and Y.-H. Wu, Department of Engineering and System Science, National Tsing-Hua University, Hsinchu, TAIWAN, R.O.C.
	III-46 Student Paper Sb-Heterostructure Backward Diode Detectors with Ultrathin Tunnel Barriers Z. Zhang¹, Ning Su², R. Rajavel³, P. Deelman³, and P. Fay¹, ¹Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana, USA, ²IBM Semiconductor Research and Development, Hopewell Junction, New York, USA and ³HRL Laboratories LLC, Malibu, California, USA

Monday | Tuesday | Wednesday