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| Technical Program—Advance Program |
Monday | Tuesday | Wednesday
Monday AM, June 18, 2012
Location: TBA |
Plenary Session
Session Chairs: Miguel Urteaga and Suman Datta |
| 8:20 AM |
Welcoming Remarks
Presentations: IEEE Fellows and Best Student Paper Awards |
| 9:00 AM |
I.-1 Plenary Paper
Mapping a Path to the Beyond-CMOS Technology for Computation
Ian A. Young, Components Research, Intel Corporation, Hillsboro, Oregon, USA |
| 9:50 AM |
Break |
| 10:20 AM |
I.-2 Plenary Paper
Ken Shepard, Columbia University
|
| 11:10 AM |
I.-3 Plenary Paper
John C. Zolper, Raytheon Company
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Monday PM, June 18, 2012
Location: TBA |
Session II.A. CMOS Plus: MEMS, SENSORS and HARVESTORS
Session Organizer: TBA
Session Chair(s): TBA |
| 1:30 PM |
II.A-1 Invited Paper
High performance miniaturized NEMS sensors Toward co-integration with CMOS?
T. Ernst, J. Arcamone, J. Philippe, O. Martin, E. Ollier, P. Batude, V. Gouttenoire, C. Marcoux, F.
Ricoul, C. Dupré, E. Colinet, O. Rozeau, G. Billiot, and L. Duraffourg, CEA, LETI, MINATEC Campus, Grenoble, FRANCE |
| 2:10 PM |
II.A-2 Invited Paper
Silicon Monolithic MEMS + Photonic Systems
S. A. Bhave, OxideMEMS Lab, Cornell University, Ithaca, New York, USA |
| 2:50 PM |
II.A-3
Highly Sensitive III-V Nitride Based Piezoresistive Microcantilever Using ea AlGaN/GaN HFET as Ultrasonic Detector
A. Talukdar1, M. Qazi2, and G. Koley1, 1University of South Carolina, Columbia, South Carolina, USA and 2Intel Corp., Portland, Oregon, USA |
| 3:10 PM |
Break
|
| 3:30 PM |
II.A-4 Invited Paper
Nanostructured thermoelectric energy conversion and refrigeration devices
A. Shakouri, Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana, USA |
| 4:10 PM |
II.A-5 Invited Paper
Piezotronics and Piezo-phototronics
Z. L.. Wang, School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia, USA |
| 4:50 PM |
II.A-6
Late News
|
Monday PM, June 18, 2012
Location: TBA |
Session II.B. ALTERNATE TRANSISTOR CONCEPT
Session Organizer: TBA
Session Chair(s): |
| 1:30 PM |
II.B-1 Invited Paper
Novel Double Layer Graphene Transistors-Bilayer Pseudospin FETs and 2D-2D Tunnel FETs
S. K. Banerjee1, L. F. Register1, E. Tutuc1, D. Reddy1, S. Kim1, D. Basu1, C. Corbet1, L. Colombo2, G. Carpenter3 and A. H. MacDonald1, 1University of Texas at Austin,2TI, and 3IBM |
| 2:10 PM |
II.B-2
Effect of Interfacial Phonon-Plasmon Modes on Electrical Transport in Supported Graphene
Z.-Y. Ong and M. V. Fischetti, Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas, USA |
| 2:30 PM |
II.B-3
Possible Applications of Topological Insulator Thin Films for Tunnel FETs
J. Chang, Leonard F. Register, and S. K. Banerjee, Microelectronics Research Center, The University of Texas at Austin, Austin, Texas, USA |
| 2:50 PM |
II.B-4
SymFET: A Proposed Symmetric Graphene Tunneling Field Effect Transistor
P. Zhao1, R. M. F.2, G. Gu3 and D. Jena1, 1Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana, USA, 2Dept. Physics, Carnegie Mellon University, Pittsburgh, Pennsylavnia, USA and 3Dept. Electrical Engineering and Computer Science, University of Tennessee, Knoxville, Tennessee, USA |
| 3:10 PM |
Break |
| 3:30 PM |
II.B-5 Invited Paper
Hybrid straintronics and spintronics: An ultra energy-efficient paradigm for logic and memory
S. Bandyopadhyay1 and J. Atulasimha2, 1Department of Electrical and Computer Engineering and 2Department of Mechanical and Nuclear Engineering, Virginia Commonwealth University, Richmond, Virginia, USA |
| 4:10 PM |
II.B-6 Invited Paper
Graphene and Topological Insulator Based Transistors: Beyond Computing Applications
Y. P. Chen, Department of Physics and Birck Nanotechnology Center and School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana, USA |
| 4:50 PM |
II.B-7
Late News
|
Monday PM, June 18, 2012
5:15 PM-6:30 PM
Location: TBA |
Session III. Poster Session
Session Organizers:TBA |
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III-1
Al2O3/InSb/Si Quantum Well MOSFETs Having an Ultra-Thin InSb Layer
K. Maezawa1, T. Ito1, A. Kadoda1, K. Nakayama1, Y. Yasui1,
M. Mori1, E. Miyazaki2 and T. Mizutani2, 1University of Toyama, Gofuku, Toyma, JAPAN and 2Nagoya University, Furo-cho, Chikusa-ku, Nagoya, JAPAN |
|
III-2
Ultra-Sensitive Magnetoelectric Sensor with High Saturation Field
L. Mei, Z. Fang, F. Li, S. Datta, and Q. M. Zhang, Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvnia, USA |
|
III-3
Study of SiOx-based Complementary Resistive Switching Memristor
Y.-F. Chang1, Y.-T. Chen1, F. Xue1, Y. Wang1, F. Zhou1, B. Fowler2, and J. C. Lee1, 1Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas, USA and 2PrivaTran, LLC, Austin, Texas, USA |
|
III-4
Illumination Instability Analysis of ZnO Thin Film Transistors with HfO2 Gate Dielectrics
J.J. Siddiqui1, J.D. Phillips1, K. Leedy2, and B. Bayraktaroglu2, 1EECS Department, University of Michigan, Ann Arbor, Michigan, USA and 2Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, Ohio, USA |
|
III-5
1.4 kV Breakdown Voltage for MOCVD grown AlGaN/GaN HEMTs on Si substrate
S. . Selvaraj, A. Watanabe, A. Wakejima and T. Egawa,
Research Center for Nano-Device and System, Nagoya Institute of Technology, Showa-ku, Nagoya, JAPAN |
|
III-6
Dopant Straggle-free Heterojunction Intra-band Tunnel (HIBT) FETs with Low Drain-induced
Barrier Lowering/Thinning (DIBL/T) and Reduced Variation in OFF Current
S. Kumar Gupta1, J. P. Kulkarni2, S. Datta3 and K. Roy1, 1Purdue Univ, West Lafayette Indiana, USA, 2Intel Corporation, Hillsboro Oregon, USA and 3Penn. State Univ, Univ. Park Pennsylvania, USA |
|
III-7
Exclusive Electrical Determination of High-Resistance Grain-Boundaries in poly-Graphene
R Chen1,2, S R. Das1, C Jeong1, D B. Janes1, M A. Alam1, 1Purdue University, West Lafayette, Indiana, USA and 2Zhejiang University, Zhejiang, CHINA |
|
III-8
Improved OFF-state Breakdown Voltage in AlGaN/GaN HEMTs grown on 150-mm Diameter Silicon-on-Insulator (SOI) Substrate
S. Arulkumaran1, V. K. X. Lin2, S. B. Dolmanan2, G.I. Ng3, S. Vicknesh1, J. P. Y. Tan2, S. L. Teo2, M. K Kumar2 and S. Tripathy2, 1Temasek Laboratories@NTU, Nanyang Technological University, SINGAPORE, 2Institute of Materials Research and Engineering, A*STAR, SINGAPORE, and 3NOVITAS, Nanoelectronics Centre of Excellence, School of EEE, Nanyang Technological University, SINGAPORE |
|
III-9
Improved Dual-Carrier High Gain Impact Ionization Engineered Avalanche Photodiode
J. Huang1, K. Banerjee1, S. Ghosh1, and M. M. Hayat2, 1Dept. of ECE, Univ. of Illinois at Chicago, Chicago, Ilinois, USA and 2Center for High Technology Materials, Univ. of New Mexico, Albuquerque, New Mexico, USA |
|
III-10
Enhanced Tunneling Current in 1d-1dEdgeOverlapped TFET’s
S. Agarwal and E. Yablonovitch, University of California, Berkeley, California, USA |
|
III-11
Metal Contacts to Mo2: a Two-Dimensional Semiconductor
A. T. Neal, H. Liu, J. J. Gu, and P. D. Ye, School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana, USA |
|
III-12
Balancing stress & dipolar interactions for fast, low power, reliable switching in multiferroic logic
K. Munira, S. Nadri, M. Forgues, and A. W. Ghosh, Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, Virginia, USA |
|
III-13
Double Slot High-k Waveguide Grating Couplers for Silicon Photonics
M. M. Naiini, C. Henkel, G. B. Malm and M. Östling,
KTH Royal Institute of Technology, School of Information and Communication Technology, Integrated Devices and Circuits, Kista, SWEDEN |
|
III-14
Self-aligned metal S/D GaSb p-MOSFETs using Ni-GaSb alloys
C. B. Zota, S. H. Kim, Y. Asakura, M. Takenaka and S. Takagi, School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo, JAPAN |
|
III-15
Bilayer Graphene Vertical Tunneling Field Effect Transistor
D. Reddy, L. F. Register, and S. K. Banerjee, University of Texas, Austin, Texas, USA |
|
III-16
440 V AlSiN-Passivated AlGaN/GaN High Electron Mobility Transistor with 40 GHz Bandwidth
E. Harvard and J. R. Shealy, Cornell University, School of Electrical and Computer Engineering, Ithaca, New York, USA |
|
III-17
Analysis of terahertz zero bias detectors by using a triple-barrier resonant tunneling diode integrated with a self-complementary bow-tie antenna
M. Suhara1, S. Takahagi1, K. Asakawa1, T. Okazaki1, M. Nakamura1, S. Yamashita1, Y. Itagaki1, M. Saito1, A. Tchegho2, G. Keller2, A.r Poloczek2, W. Prost2, F-J. Tegud2, 1Electrical and Electronic Engineering, Graduate School of Science and Engineering, Tokyo Metropolitan University, Hachioji, Tokyo, JAPAN and 2Center for Semiconductor Technology and Optoelectronics, University of Duisburg-Essen, Duisburg, GERMANY |
|
III-18
An InAs Nanowire Spin Transistor with Subthreshold Slope of 20mV/dec
K. Yoh1, Z. Cui1, K. Konishi1, M. Ohno2, K. Blekker3, W. Prost3, F.-J. Tegude3, J.-C. Harmand4, 1Research Center for Integrated Quantum Electronics , Hokkaido University, Sapporo, JAPAN, 2Graduate School of Engineering, Hokkaido University, Sapporo, JAPAN, 3Semiconductor and Information Engineering, University of Duisburg-Essen, Duisburg, GERMANY, and 4CNRS-Laboratory of Photonic and Nanostructures , Marcoussis, FRANCE |
|
III-19
Understanding dual-gate polymer field-effect transistors
T.-J. Ha1, P. Sonar2 and A. Dodabalapur1, 1Microelectronics Research Center, The University of Texas at Austin, Austin, Texas, USA and 2Institute of Materials Research and Engineering, Singapore, SINGAPORE |
|
III-20
Fundamental Limitations of Conventional-FET Biosensors: Quantum-Mechanical-Tunneling to the Rescue
D. Sarkar and K. Banerjee, Department of Electrical and Computer Engineering, University of California, Santa Barbara, California, USA |
|
III-21
Can Quasi-Saturation in the Output Characteristics of Short-Channel Graphene Field-Effect Transistors be Engineered?
K. Ganapathi1, M. Lundstrom2 and S. Salahuddin1, 1,Department of Electrical Engineering and Computer Sciences, UC Berkeley, Berkeley, California, USA and 2,School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana, USA |
|
III-22
Phonon Limited Transport in Graphene Pseudospintronic Devices
Z. J. Estrada, B. Dellabetta, U. Ravaioli, and M. J. Gilbert,
University of Illinois at Urbana-Champaign, Urbana, Illinois, USA |
|
III-23
Resistive Switching in Aluminum Nitride
M. J. Marinella, J. E. Stevens, E. M. Longoria, and P. G. Kotula,
Sandia National Laboratories, Albuquerque, New Mexico, USA |
|
III-24
Limits of Detection for Silicon Nanowire BioFETs
N. K. Rajan, X. Duan, A. Vacic, D. A. Routenberg, M. A. Reed, Dept. of Applied Physics, Dept. of Electrical Engineering, New Haven, Connecticut, USA |
|
III-25
Hole-blocking TiO2/Silicon Heterojunction for Silicon Photovoltaics
S. Avasthi1, W. McClain2, J. Schwartz2, and J. C. Sturm1, Princeton Institute for the Science and Technology of Materials, Princeton University, Princeton New Jersey, USA and 1Department of Electrical Engineering and 2Department of Chemistry |
|
III-26
Recess Integration of Platelet Laser Diodes with Waveguides on Silicon
S. Famenini and C. G. Fonstad, Massachusetts Institute of Technology, Cambridge, Massachusetts, USA |
|
III-27
NLSTT-MRAM: Robust Spin Transfer Torque MRAM using Non-Local Spin Injection for Write
M. Sharad1, G. Panagopoulos1, C. Augustine2 and K. Roy1, 1School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana, USA and 2Circuit Research Lab, Intel labs, Intel Corporation, Hillsboro, Oregon, USA |
|
III-28
All Spin Logic device as a compact artificial neuron
A. Sarkar1, B. Behin-Aein2, S. Srinivasan1, and S. Datta1, 1School of Electrical and Computer Engineering, Purdue University, W. Lafayette, Indiana, USA and 2Technology Research Group, GLOBALFOUNDRIES USA, Sunnyvale, Calidorna, USA |
|
III-29
Experimental Demonstration of “Cold” Low Contact Resistivity Ohmic Contacts on Moderately Doped n-Ge with in-situ Atomic Hydrogen Clean
A. Agrawal1, J. Park2, D. Mohata1, K. Ahmed2 and S. Datta1, 1Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania, USA and 2Applied Materials, Inc., Santa Clara, California, USA |
|
III-30
Mobility and Scattering Mechanisms in Buried InGaSb Quantum Well Channels Integrated with in-situ MBE Grown Gate Oxide
S. Madisetti, P. Nagaiah, T. Chidambaram, V. Tokranov, M. Yakimov, and S. Oktyabrsky, College of Nanoscale Science and Engineering, University at Albany- SUNY, Albany, New York, USA |
|
III-31
Dielectric Thickness Dependence of Quantum Capacitance in Graphene Varactors with Local Metal Back Gates
M. A. Ebrish and S. J. Koester, University of Minnesota-Twin Cities, Minneapolis, Minnesota, USA |
|
III-32
Negative di erential resistance in short-channel graphene FETs: semianalytical model and simulations
R. Grassi1, T. Low2, A. Gnudi1 and G. Baccarani1, 1ARCES, University of Bologna, Bologna, ITALY and 2IBM T.J. Watson Research Center, Yorktown Heights, New York, USA |
|
III-33
Drain-Induced-Barrier Lowering and Subthreshold Swing Fluctuations in 16-nm-Gate Bulk FinFET Devices Induced by Random Discrete Dopants
H.-W. Su, Y. Li, Y.-Y. Chen, C.-Y. Chen, and H.-T. Chang, Parallel and Scientific Computing Laboratory, Department of Electrical Engineering, National Chiao Tung University, Hsinchu, TAIWAN |
|
III-34
THz Detector Based on Proximity Effect of Topological Insulator
X. Li, Y. G. Semenov, and K. W. Kim, Dept. of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina, USA |
|
III-35
Transverse-Field Bandgap Modulation on Graphene Nanoribbon Transistors by Double-Self-Aligned Spacers
L.-T. Tung, M. V. Mateus and E. C. Kan, School of Electrical and Computer Engineering, Cornell University, Ithaca, New York, USA |
|
III-36
Epitaxial Si Punch-Through based Selector for Bipolar RRAM
P. Bafna1, P. Karkare1, S Srinivasan1, S. Chopra2, S. Lashkare1, Y. Kim2, S. Srinivasan2, S. Kuppurao2, S. Lodha1, and U. Ganguly1, 1Department of Electrical Engineering, Indian Institute of Technology, Bombay, Mumbai, INDIA and 2Epi-Division, Front End Products, Applied Materials Inc., Santa Clara, California, USA |
|
III-37
A Figure of Merit for Oscillator-Based Thin-Film Circuits on Plastic for High-Performance Signaling, Energy Harvesting and Driving of Actuation Circuits
W. Rieutort-Louis, L. Huang, Y. Hu, J. Sanz-Robinson, S. Wagner, J. C. Sturm, N. Verma
Princeton University, Department of Electrical Engineering, Princeton, New Jersey, USA |
|
III-38
Short-Channel Enhancement-mode Planar GaAs Nanowire HEMTs through a Bottom-up method
Xin Miao, Chen Zhang and Xiuling Li, Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory
University of Illinois at Urbana-Champaign, Urbana, Illinois, USA |
|
III-39
Electric Field Driven Domain Wall Transfer in Hybrid Structures
X. Duan1, V. Stephanovich2, Y. G. Semenov1,H. Fangohr3, M. Franchin3, and K. Wook Kim1, 1Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina, USA, 2nstitute of Physics, Opole University, Oleska, POLAND and 3Engineering and the Environment, University of Southampton, Southampton, United Kingdom |
|
III-40
Comparison of Graphene Nanoribbons With Cu and Al Interconnects
N. Wang1, C. D. English2, and E. Pop1, 1Dept. of Electrical and Computer Engineering and 2Dept. of Physics, University of Illinois at Urbana-Champaign, Urbana Ilinois, USA |
|
III-41
Electrical Control of Nuclear-Spin-Induced Hall Voltage in an Inverted InAs Heterostructure
T. Ishikura, Z. Cui and K. Yoh, Research Center of Integrated Quantum Electronics, Hokkaido University, Sapporo, JAPAN |
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III-42
Epitaxialy defined (ED) FinFET: to reduce VT variability and enable multiple VT
S. Mittal1, S. Gupta2, A. Nainani2, M.C. Abraham2, K. Schuegraf2, S. Lodha1, U. Ganguly1, 1CEN, Department of EE, Indian Institute of Technology Bombay, INDIA and 2Applied Materials Inc, Santa Clara, California, USA |
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III-43
Power Reduction in Nanomagnetic Logic Clocking through High Permeability Dielectrics
P. Li1, G. Csaba1, V. K. Sankar1, X. S. Hu2, M. Niemier2, W. Porod1, G. H. Bernstein1, 1Department of Electrical Engineering and 2Department of Computer Science and Engineering, University of Notre Dame, Notre Dame, Indiana, USA |
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III-44
New Tunnel-FET Architecture with Enhanced ION and Improved Miller Effect for Energy Efficient Switching
A. Biswas, C. Alper, L. De Michielis, A. M. Ionescu, Nanoelectronics Devices Laboratory (NANOLAB), Ecole Polytechnique Fédérale de Lausanne, EPFL, SWITZERLAND |
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III-45
Switching dynamics in ferroelectric-charge hybrid nonvolatile memory
K. Auluck, S. Rajwade and E. C. Kan, School of Electrical and Computer Engineering, Cornell University, Ithaca, New York, USA |
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III-46
Frequency Dependence of Amorphous Silicon Schottky Diodes for Large-Area Rectification Applications
J. Sanz-Robinson, W. Rieutort-Louis, N. Verma, S. Wagner, and J. C. Sturm, Dept. of Electrical Engineering and the Princeton Institute for the Science and Technology of Materials, Princeton University, Princeton, New Jersey, USA |
|
III-47
Reliability Improvement Achieved by N2O Radical Treatment for AlGaN/GaN Heterojunction Field-Effect Transistors
C.-Y. Hu and T. Hashizume, Research Center for Integrated Quantum Electronics (RCIQE),Hokkaido University, Sapporo, JAPAN |
|
III-48
Exploring Variability and Reliability of Multi-Level STT-MRAM Cells
G. Panagopoulos1, C. Augustine2, X. Fong1 and K. Roy1, 1School of ECE, Purdue University, West Lafayette, Indiana, USA and 2Circuit Research Lab, Intel labs, Hillsboro, Oregon, USA |
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III-49
Comparative Study of LEDs conformally overgrown on multi-facet GaN NWs vs. conventional c-plane LEDs
A..M. Hosalli1, P. Frajtag2, D. M. Van Den Broeck1, T. Paskova12, N..A. El-Masry2, and S..M. Bedair1,, 1Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina, USA and 2Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina, USA |
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III-50
Inkjet-printed SWCNT films for stretchable electrode and strain sensor applications
T. Kim, J. Byun, H. Song and Y. Hong,
Department of Electrical Engineering and Computer Science, Seoul National University,
Gwanak-gu, Seoul, KOREA |
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III-51
Comparison of Instantaneous Crystallization and Metastable Models in Phase Change Memory Cells
A. Faraclas, N. Williams, G.n Bakan, A. Gokirmak, and H. Silva, Electrical and Computer Engineering, University of Connecticut, Storrs, Connecticut, USA |
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III-52
A Surface-Potential Based Compact Model for GaN HEMTs Incorporating Polarization Charges
R. Jana and D. Jena,
Electrical Engineering, University of Notre Dame, Notre Dame, Indiana, USA |
Monday | Tuesday | Wednesday
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