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Welcome from the General Chair:

Important Deadlines:

Abstract Submission Deadline: passed

Author Acceptance Notification: passed

Advance Registration Deadline: passed

Late News Submission Deadline: passed

For over sixty years, the Device Research Conference has brought together leading scientists, researchers, and graduate students from various disciplines in academia and industry to share their latest research, insights and discoveries in the field. As always, the main goal of the conference is to stimulate an open and frank discussion on recent breakthroughs and advances on electronic and optical devices. The university setting of the Device Research Conference encourages the exchange of creative ideas and provides a great atmosphere for social events. The technical program will be a mix of invited, oral, and poster presentations. Once again, the conference will hold three evening rump sessions aimed at engaging the audience in a vigorous and charged discussion on the future directions of competing device technologies. The Device Research Conference has a tradition of strong graduate student participation. This is recognized by offering student travel support and as a particular highlight, the Best Student Paper Award. As a new feature, this 67th session of the DRC features an innovative short course on Graphene Physics and Devices to be held on Sunday, June 21, 2009.

The Device Research Conference is coordinated with the Electronic Materials Conference to be held during the same week from June 24 to 26, 2009. This recognizes the strong interaction between device and electronic materials research and provides for fruitful exchange of information between attendees of both conferences.

Please check back in early 2009 to see the outstanding plenary and invited speaker schedule and special sessions that are planned.

I hope to see you at Penn State this summer.

Regards,

Steve Koester
General Chair


UPDATE:
The Advance Program is now available. Online registration is also available.





Images at top (from left to right): Nanotube Ring Oscillator (Courtesy: IBM), InP HBT (Courtesy: RSC), III-V Diode (Courtesy: RSC), GaAs HEMT (Courtesy: RSC), Organic Transistor (Courtesy: NIST)


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